STMicroelectronics STWA57N65M5 650V N-Channel MOSFET (TO-247 Package)
- Brand: STMicroelectronics
- Product Code: STWA57N65M5
- Availability: In Stock
$3.00
- Ex Tax: $3.00
Revolutionizing Power Management with STMicroelectronics STWA57N65M5 MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its MDmesh™ V series. The STWA57N65M5, a cutting-edge N-Channel MOSFET rated at 650V and 42A, exemplifies advanced semiconductor engineering. Designed for high-efficiency power conversion systems, this TO-247 packaged device combines exceptional electrical characteristics with robust thermal performance, making it ideal for demanding applications in industrial automation, renewable energy systems, and high-power motor drives.
Technical Excellence in Power Discrete Design
At the heart of this device lies ST's proprietary MDmesh™ V technology, which significantly reduces conduction losses while maintaining exceptional switching performance. With a maximum RDS(on) of just 63mΩ at 21A and 10V gate drive, the STWA57N65M5 delivers minimal voltage drop and superior energy efficiency. The optimized gate charge characteristic of 98nC (at 10V) ensures rapid switching transitions, reducing electromagnetic interference (EMI) and improving overall system performance.
Engineered for reliability in extreme conditions, this MOSFET maintains operational integrity up to 150°C junction temperature. Its ±25V gate voltage tolerance provides enhanced protection against voltage spikes, while the 4200pF input capacitance (at 100V VDS) ensures stable operation in high-frequency applications. The through-hole TO-247 package facilitates efficient heat dissipation, supporting the device's 250W power dissipation rating.
| Key Specification | Performance Value |
|---|---|
| Max VDS | 650V |
| Continuous Drain Current | 42A @ 25°C |
| RDS(on) Max | 63mΩ @ 10V VGS |
| Gate Charge | 98nC @ 10V |
| Operating Temperature | 150°C (TJ) |
Applications Beyond Conventional Limits
This high-performance MOSFET excels in various power conversion scenarios. Its combination of high breakdown voltage and low on-resistance makes it particularly suitable for:
- Industrial motor drives and variable frequency drives
- Renewable energy systems (solar inverters, wind turbines)
- High-efficiency power supplies (SMPS, server PSUs)
- Electric vehicle charging infrastructure
- Industrial automation equipment
The device's inherent design advantages translate to real-world benefits for system designers. Reduced conduction and switching losses directly contribute to higher system efficiency, allowing for smaller heatsink requirements and improved power density. The stable threshold voltage of 5V (at 250µA) ensures consistent performance across operating conditions, while the inherent avalanche ruggedness provides additional reliability in harsh environments.
Designing with Confidence
STMicroelectronics' STWA57N65M5 represents the culmination of decades of MOSFET innovation. Its balanced specification profile addresses the critical needs of modern power electronics design: minimizing energy loss while maintaining robust switching performance. When integrated into power conversion systems, this device enables engineers to push the boundaries of efficiency and power density while maintaining exceptional reliability.
For designers seeking to optimize their power architectures, this MOSFET offers the perfect combination of electrical performance and mechanical robustness. Its compatibility with standard gate drive circuits and ease of thermal management make it an excellent choice for both established and emerging power electronics applications. Whether upgrading existing designs or developing next-generation power systems, the STWA57N65M5 provides the foundation for creating high-performance, energy-efficient solutions that meet today's demanding requirements.
Tags: Power MOSFET, N-Channel Transistor, High Voltage, Industrial Electronics, Energy Efficiency