STW6N95K5 N-Channel MOSFET | 950V 9A TO-247-3 Power Transistor

The STW6N95K5 N-Channel MOSFET: High-Performance Power Solutions for Demanding Applications

In the rapidly evolving landscape of power electronics, the STW6N95K5 N-Channel MOSFET from STMicroelectronics emerges as a groundbreaking solution designed to meet the rigorous demands of high-voltage and high-current applications. Engineered with advanced SuperMESH5™ technology, this power transistor combines exceptional electrical performance with robust thermal stability, making it an ideal choice for engineers and designers seeking reliability in critical systems.

Key Features and Technical Specifications

The STW6N95K5 delivers an impressive 950V drain-to-source voltage (Vdss) rating, ensuring compatibility with high-power industrial, automotive, and renewable energy systems. Its continuous drain current of 9A at 25°C enables efficient power delivery in demanding environments. The device's ultra-low on-state resistance of 1.25Ω (measured at 3A and 10V gate-source voltage) minimizes conduction losses, enhancing system efficiency and reducing thermal stress.

Advanced Technology for Superior Performance

At the heart of the STW6N95K5 lies STMicroelectronics' proprietary SuperMESH5™ technology, which optimizes the trade-off between conduction and switching losses. This innovative approach results in a device that maintains exceptional efficiency across a wide range of operating conditions. The MOSFET's ±30V gate-source voltage tolerance provides enhanced protection against transient voltage spikes, while its 450pF input capacitance (measured at 100V Vds) ensures fast switching performance with minimal drive current requirements.

Engineered for real-world applications, this transistor demonstrates remarkable thermal resilience with a 90W power dissipation rating at the case temperature. Its through-hole TO-247-3 packaging combines mechanical durability with excellent thermal management capabilities, making it suitable for high-reliability systems requiring robust component mounting.

Applications in Modern Electronics

The versatility of the STW6N95K5 makes it an indispensable component in various high-performance applications. In industrial settings, it excels in motor drives, power supplies, and welding equipment where precise current control and high breakdown voltage are critical. Automotive engineers leverage its capabilities in electric vehicle charging systems and on-board DC-DC converters, benefiting from its 100µA gate threshold voltage (5V max) that ensures stable operation in noisy environments.

Renewable energy systems, particularly solar inverters and energy storage solutions, benefit significantly from this MOSFET's high efficiency and thermal stability. Its ability to maintain consistent performance across extreme temperature ranges (-55°C to 150°C) makes it suitable for outdoor and industrial applications where environmental conditions fluctuate dramatically.

Superior Packaging and Reliability

The TO-247-3 package not only provides excellent thermal dissipation but also facilitates easy integration into existing PCB designs. This through-hole mounting configuration offers superior mechanical stability compared to surface-mount alternatives, making it particularly suitable for applications subject to vibration or thermal cycling. The device's 10V gate drive compatibility ensures seamless interfacing with standard logic-level controllers, simplifying system design and reducing component count.

With its active product status and tube packaging that preserves device integrity during storage and handling, the STW6N95K5 offers both long-term availability and handling convenience. The combination of STMicroelectronics' rigorous quality standards and the device's inherent design robustness ensures exceptional field reliability, minimizing maintenance requirements and system downtime.

Design Advantages and System Benefits

By integrating the STW6N95K5 into power circuits, designers can achieve significant improvements in system efficiency and compactness. The device's low gate charge (13nC) reduces driver power requirements, enabling the use of smaller, more cost-effective gate drive circuits. Its optimized Rds(on) characteristics minimize conduction losses, allowing for either reduced heatsinking requirements or increased power density in space-constrained applications.

The transistor's inherent ruggedness, demonstrated by its 950V breakdown voltage capability, provides designers with a safety margin that enhances system longevity in challenging electrical environments. This robustness proves particularly valuable in applications where voltage transients and load variations are common, such as in motor control and inductive load switching scenarios.

Tags: Power Electronics, High-Voltage Transistors, MOSFET Technology, TO-247-3 Components, Energy Efficiency