STMicroelectronics STW48N60M2 MDmesh™ M2 MOSFET N-Channel 600V 42A TO-247
- Brand: STMicroelectronics
- Product Code: STW48N60M2
- Availability: In Stock
$0.98
- Ex Tax: $0.98
High-Performance Power Management with STMicroelectronics STW48N60M2 MOSFET
The STMicroelectronics STW48N60M2 MDmesh™ M2 MOSFET represents a pinnacle of efficiency and reliability in power electronics. Designed for demanding applications requiring robust performance, this N-Channel MOSFET delivers exceptional specifications, including a 600V drain-to-source voltage rating and a continuous drain current of 42A at 25°C. Housed in a TO-247-3 package, the device combines advanced semiconductor technology with thermal stability for optimal operation in high-stress environments.
Key Features and Specifications
| Parameter | Value |
|---|---|
| Drain to Source Voltage (Vdss) | 600 V |
| Continuous Drain Current (Id) @ 25°C | 42A (Tc) |
| Rds(on) (Max) @ Id, Vgs | 70mΩ @ 21A, 10V |
| Gate Charge (Qg) | 70 nC @ 10 V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
Engineered for versatility, the STW48N60M2 excels in power conversion systems such as industrial motor drives, renewable energy inverters, and high-efficiency power supplies. Its MDmesh™ M2 technology minimizes conduction losses while maintaining fast switching capabilities, ensuring energy efficiency and reduced heat generation. The ±25V gate voltage tolerance provides robustness against transient spikes, enhancing long-term reliability in harsh operating conditions.
This MOSFET's 3060 pF input capacitance (Ciss) at 100V and 300W power dissipation rating make it ideal for high-frequency applications requiring precise control. The through-hole TO-247 package facilitates easy integration into PCB designs with superior thermal management. For designers seeking compact yet powerful solutions, the STW48N60M2 offers a compelling balance of electrical performance and mechanical durability.
As part of STMicroelectronics' active product portfolio, this device benefits from the company's decades of expertise in semiconductor innovation. Its 4V gate threshold voltage (Vgs(th)) ensures compatibility with standard logic-level drivers while maintaining minimal leakage current. The 70nC gate charge (Qg) enables rapid switching transitions, reducing switching losses in high-frequency circuits.
Tags: Power Electronics, Semiconductor Devices, N-Channel MOSFET, High Voltage Transistors, STMicroelectronics Components