STMicroelectronics STW40N90K5 N-Channel MOSFET 900V 40A TO-247
- Brand: STMicroelectronics
- Product Code: STW40N90K5
- Availability: In Stock
$7.00
- Ex Tax: $7.00
Revolutionizing Power Management with STW40N90K5 MDmesh™ K5 MOSFET
STMicroelectronics continues to push the boundaries of semiconductor technology with its STW40N90K5 N-Channel MOSFET, a high-performance power transistor engineered for demanding applications requiring exceptional voltage handling capabilities and thermal efficiency. This cutting-edge device combines advanced MDmesh™ K5 technology with robust TO-247 packaging to deliver unparalleled reliability in high-voltage systems.
Technical Excellence in Power Transistor Design
The STW40N90K5 represents the culmination of STMicroelectronics' expertise in power semiconductor development. With a 900V drain-source voltage rating and 40A continuous drain current capacity, this MOSFET is specifically designed for applications operating in extreme electrical environments. The device's 99mΩ maximum RDS(on) ensures minimal conduction losses, while its 89nC gate charge specification enables rapid switching transitions that reduce overall system energy consumption.
Engineered with ±30V gate-source voltage protection, the STW40N90K5 offers enhanced robustness against voltage spikes and transient events. The 5V gate threshold voltage (at 100µA) enables compatibility with standard logic-level drivers while maintaining excellent noise immunity. These specifications make it particularly suitable for industrial power supplies, motor control systems, and high-voltage converter applications where reliability is paramount.
| Parameter | Value |
|---|---|
| Max Voltage | 900 V |
| Continuous Current | 40 A |
| RDS(on) Max | 99 mΩ @ 10V VGS |
| Operating Temp | -55°C to 150°C |
Advanced Thermal Management System
One of the standout features of this MDmesh™ K5 series MOSFET is its exceptional thermal performance. The device's through-hole TO-247-3 packaging facilitates efficient heat dissipation, with a maximum power dissipation rating of 446W at case temperature. This thermal efficiency translates to improved reliability and extended operational lifespan in continuous high-power applications.
The 3260pF input capacitance at 100V VDS ensures stable operation across a wide frequency range, making it ideal for switching applications up to several hundred kilohertz. The device maintains its performance characteristics even under extreme thermal conditions, thanks to its advanced die design and optimized package materials.
Industrial-Grade Reliability
Designed for harsh operating environments, the STW40N90K5 meets rigorous industrial standards with its -55°C to 150°C operating temperature range. This wide thermal tolerance allows deployment in challenging environments from factory automation systems to renewable energy converters. The device's inherent avalanche ruggedness and short-circuit withstand capability further enhance system reliability.
As part of STMicroelectronics' MDmesh™ K5 series, this MOSFET incorporates the latest advancements in trench gate and field stop technologies. The result is a power transistor that combines high voltage capability with the switching performance typically associated with lower voltage devices, opening new possibilities for innovative power system designs.
Tags: Power Transistor, High Voltage MOSFET, N-Channel Technology, STMicroelectronics Components, TO-247 Package