STMicroelectronics STW21N150K5 MDmesh™ K5 Series 1500V 14A N-Channel MOSFET (TO-247-3)

STMicroelectronics STW21N150K5 MDmesh™ K5 Series N-Channel MOSFET for High-Voltage Power Applications

The STMicroelectronics STW21N150K5 represents the cutting-edge MDmesh™ K5 technology, engineered to deliver exceptional performance in high-voltage switching applications. This N-channel power MOSFET combines advanced silicon design with robust TO-247-3 packaging, making it ideal for demanding industrial, automotive, and renewable energy systems where reliability and efficiency are critical.

With its 1500V drain-source voltage rating and 14A continuous drain current capability, this device is specifically designed to handle extreme electrical loads while maintaining minimal conduction losses. The MDmesh™ K5 series leverages ST's innovative technology to achieve an optimal balance between on-resistance (R_DS(on)) and switching performance, ensuring superior thermal management even in high-frequency operations.

Key Technical Specifications

At the heart of the STW21N150K5's performance lies its 900mΩ maximum on-resistance measured at 7A and 10V gate-source voltage. This exceptionally low resistance enables significant power savings in applications such as solar inverters, motor drives, and high-voltage DC-DC converters. The device maintains stable operation across extreme temperature ranges (-55°C to 150°C) and features ±30V gate-source voltage protection for enhanced reliability.

Applications and Performance Benefits

Engineers developing high-voltage power systems will find the STW21N150K5 particularly valuable for its 446W maximum power dissipation rating and optimized switching characteristics. The device excels in industrial motor control systems where precise power regulation is essential, and in renewable energy applications like photovoltaic inverters where energy conversion efficiency directly impacts system ROI.

The MDmesh™ K5 series incorporates advanced process technology that significantly reduces switching losses compared to previous generations. This translates to improved system efficiency, reduced thermal management requirements, and the ability to operate at higher frequencies without compromising reliability. The through-hole TO-247-3 packaging ensures robust mechanical stability and efficient heat dissipation in high-power environments.

Design Advantages

One of the device's standout features is its 5V gate threshold voltage (measured at 100µA), which enables compatibility with standard logic-level gate drivers while maintaining excellent noise immunity. The 10V drive voltage requirement optimizes performance across various operating conditions, ensuring minimal voltage drop while preventing excessive gate wear.

The STW21N150K5's 89nC gate charge specification contributes to faster switching transitions, reducing both turn-on and turn-off losses in high-frequency applications. This characteristic makes it particularly suitable for modern power architectures employing resonant or soft-switching topologies where minimizing switching energy is crucial.

Quality and Reliability

As part of STMicroelectronics' MDmesh™ family, this device undergoes rigorous testing to ensure compliance with industrial-grade reliability standards. The active product status confirms its availability for long-term design projects, while the comprehensive datasheet specifications provide detailed thermal derating curves and safe operating area (SOA) information for precise system design.

Whether you're developing high-voltage DC power supplies, industrial automation equipment, or energy-efficient motor drives, the STW21N150K5 offers the perfect combination of voltage capability, current capacity, and thermal performance. Its tube packaging format ensures proper handling and protection during manufacturing processes, maintaining device integrity from storage to final assembly.

Tags: High Voltage Transistor, Power Management, N-Channel MOSFET, TO-247 Package, Industrial Electronics