STW13NK100Z N-Channel MOSFET 1000V 13A TO-247-3 SuperMESH™
- Brand: STMicroelectronics
- Product Code: STW13NK100Z
- Availability: In Stock
$4.00
- Ex Tax: $4.00
High-Performance STW13NK100Z N-Channel MOSFET for Demanding Power Applications
Engineered by STMicroelectronics, the STW13NK100Z N-Channel MOSFET represents the pinnacle of power semiconductor technology in the SuperMESH™ series. Designed for high-voltage industrial applications, this TO-247-3 packaged device combines exceptional electrical performance with robust thermal management capabilities. Whether you're developing switching power supplies, motor drives, or renewable energy systems, this 1000V/13A MOSFET delivers the reliability and efficiency modern power electronics demand.
Technical Excellence in Power Switching
The STW13NK100Z leverages STMicroelectronics' advanced MOSFET technology to achieve remarkable specifications. With a maximum drain-source voltage (Vdss) of 1000V and continuous drain current capability of 13A at 25°C, this device operates efficiently even in high-stress environments. Its optimized Rds(on) of 700mΩ at 6.5A and 10V gate-source voltage ensures minimal conduction losses, while the 266nC gate charge (Qg) at 10V enables fast switching transitions with reduced driver requirements.
| Parameter | Value |
|---|---|
| Max Voltage | 1000V |
| Continuous Current | 13A (Tc) |
| Rds(on) Max | 700mΩ @ 6.5A |
| Gate Charge | 266nC @ 10V |
| Operating Temp | -55°C to 150°C |
Engineered for Reliability
With ±30V gate-source voltage tolerance and 6000pF input capacitance at 25V, the STW13NK100Z maintains stable operation across diverse load conditions. The through-hole TO-247-3 packaging ensures excellent thermal dissipation, supporting its 350W power dissipation rating at case temperature. This rugged construction, combined with ST's proprietary SuperMESH™ technology, provides superior avalanche energy handling and long-term reliability in critical applications.
From industrial automation to electric vehicle charging systems, this MOSFET excels in applications requiring precise power control. Its high-voltage capability makes it ideal for off-line converters, while the fast switching characteristics benefit resonant topologies and high-frequency inverters. The device's 4.5V gate threshold voltage ensures compatibility with standard gate drivers while maintaining noise immunity.
Why Choose STW13NK100Z?
As part of STMicroelectronics' SuperMESH™ family, this device offers several advantages over conventional high-voltage MOSFETs. The optimized silicon design reduces both conduction and switching losses, improving overall system efficiency. The device's robust construction withstands harsh operating environments, with guaranteed performance across the full industrial temperature range. Whether implementing hard-switching or soft-switching topologies, engineers can rely on consistent performance and extended operational life.
For designers seeking a reliable, high-performance power switching solution, the STW13NK100Z N-Channel MOSFET delivers the perfect balance of voltage capability, current capacity, and switching efficiency. Backed by STMicroelectronics' reputation for quality and innovation, this component represents a smart investment for next-generation power electronics projects.
Tags: High-Voltage MOSFET, SuperMESH Technology, Through-Hole Package, Power Switching, Industrial Electronics