STMicroelectronics STW12N120K5 MDmesh K5 Series MOSFET
- Brand: STMicroelectronics
- Product Code: STW12N120K5
- Availability: In Stock
$4.10
- Ex Tax: $4.10
Revolutionizing Power Management with STMicroelectronics STW12N120K5
The STMicroelectronics STW12N120K5 represents the pinnacle of high-voltage MOSFET technology in the MDmesh™ K5 series, engineered for demanding power conversion applications. This N-Channel power transistor combines exceptional electrical characteristics with robust thermal performance, making it an ideal choice for next-generation industrial and automotive systems. With its TO-247 package and advanced silicon design, this device delivers unprecedented efficiency in high-voltage operations while maintaining exceptional reliability.
Technical Excellence in Power Semiconductor Design
At the heart of the STW12N120K5 lies STMicroelectronics' cutting-edge MDmesh K5 technology, which achieves an optimal balance between conduction and switching losses. The device's 1200V breakdown voltage rating enables reliable operation in high-voltage power supplies, motor drives, and renewable energy systems. Its 12A continuous drain current capability at 25°C, combined with a remarkably low RDS(on) of just 690mΩ measured at 6A and 10V gate-source voltage, ensures minimal power loss during operation.
The transistor's gate charge characteristics further enhance its switching performance, with a maximum Qg of 44.2nC at 10V VGS, significantly reducing switching losses in high-frequency applications. The device maintains exceptional thermal stability with its ±30V gate-source voltage rating and operates reliably across an extreme temperature range of -55°C to 150°C, making it suitable for both industrial and automotive environments.
| Key Parameter | Value |
|---|---|
| Max VDS | 1200 V |
| Max ID | 12 A |
| RDS(on) | 690 mΩ |
| Qg | 44.2 nC |
Applications and Performance Benefits
This high-performance MOSFET finds its applications in various power electronics systems including industrial power supplies, electric vehicle charging stations, solar inverters, and motor control circuits. The device's high voltage capability and excellent thermal characteristics make it particularly suitable for applications requiring both high efficiency and compact form factors. Its through-hole mounting configuration in the TO-247-3 package ensures reliable mechanical stability and efficient heat dissipation in demanding environments.
The STW12N120K5's unique combination of high voltage rating and low on-resistance enables designers to create more efficient power systems with reduced component count. Compared to previous generation devices, this transistor offers significant improvements in both conduction and switching losses, contributing to higher overall system efficiency and reduced thermal management requirements.
When integrated into power conversion designs, this MOSFET demonstrates exceptional reliability and longevity, thanks to its advanced silicon technology and robust packaging. The device's inherent ruggedness and stable operation across extreme temperatures ensure consistent performance in the most challenging applications, from industrial automation systems to electric vehicle powertrains.
Tags: Power MOSFET, High Voltage Transistor, Industrial Electronics, Semiconductor Devices