STMicroelectronics STU7N105K5 SuperMESH5™ N-Channel MOSFET 1050V 4A IPAK

STMicroelectronics STU7N105K5 SuperMESH5™ MOSFET: High-Voltage Power Solution for Demanding Applications

The STU7N105K5 from STMicroelectronics represents the cutting-edge SuperMESH5™ technology, engineered to deliver exceptional performance in high-voltage power management systems. This N-Channel MOSFET combines robust 1050V breakdown voltage with optimized conduction and switching characteristics, making it an ideal choice for industrial, automotive, and energy-efficient power conversion applications.

Advanced Technology for Superior Performance

At the heart of this device lies ST's fifth-generation SuperMESH technology, which achieves an unprecedented balance between on-resistance (R_DS(on)) and switching performance. With a maximum R_DS(on) of just 2Ω at 2A/10V, this MOSFET minimizes conduction losses while maintaining fast switching capabilities. The 17nC gate charge rating ensures efficient operation in high-frequency circuits, reducing overall system power consumption.

Engineered for reliability in harsh environments, the STU7N105K5 features ±30V gate voltage tolerance and operates across the full industrial temperature range of -55°C to 150°C. Its TO-251IPAK package provides excellent thermal dissipation with a maximum power dissipation rating of 110W at case temperature.

Technical Excellence in Power Management

This high-voltage MOSFET delivers comprehensive specifications that meet modern power electronics requirements:

The device's 10V drive voltage compatibility ensures seamless integration with standard gate drivers, while its through-hole IPAK packaging provides mechanical stability in vibration-prone environments.

Application Versatility

The STU7N105K5's performance characteristics make it particularly well-suited for:

• Switch-mode power supplies (SMPS)
• Solar inverters and energy storage systems
• Motor drive circuits
• Industrial automation equipment
• Automotive power management systems

Its high voltage capability and thermal robustness enable reliable operation in demanding applications where traditional MOSFETs might struggle. The device's 1050V rating provides ample design margin for systems operating in unstable voltage environments.

Durability and Reliability

Built to STMicroelectronics' exacting quality standards, this SuperMESH5 MOSFET features enhanced avalanche energy ratings and improved short-circuit withstand capability. The device's rugged construction ensures long-term reliability even under repetitive stress conditions, making it suitable for mission-critical applications.

With 2624 units currently in stock and bulk pricing available, the STU7N105K5 offers both immediate availability and cost-effective scaling for production requirements. Each device is supplied in protective tube packaging to ensure safe handling and assembly.

Design Considerations

For optimal performance, designers should consider the following recommendations:

• Implement proper gate drive circuitry with adequate current sourcing/sinking capability
• Ensure adequate heatsinking for high-power applications
• Incorporate appropriate snubber circuits for inductive load switching
• Follow STMicroelectronics' recommended PCB layout guidelines

When compared to similar devices in the 1000V+ MOSFET category, the STU7N105K5 stands out with its superior R_DS(on) × Qg figure of merit, which directly translates to reduced system losses and improved overall efficiency.

Tags: Power Electronics, Voltage Regulation, Industrial Semiconductors, High-Efficiency MOSFETs, Automotive Electronics