STP6N80K5 N-Channel MOSFET Transistor

Advanced Power Management with STP6N80K5 SuperMESH5™ MOSFET

In modern power electronics design, engineers face constant challenges balancing efficiency, thermal performance, and reliability. STMicroelectronics' STP6N80K5 N-Channel MOSFET emerges as a game-changer in this landscape, combining cutting-edge SuperMESH5™ technology with robust TO-220 packaging to deliver exceptional performance across diverse applications. This advanced power transistor sets new benchmarks for switch-mode power supplies, motor control systems, and industrial automation equipment.

Technical Excellence in Power Semiconductor Design

Engineered with STMicroelectronics' fifth-generation SuperMESH™ technology, the STP6N80K5 offers an optimal balance between conduction and switching losses. Its 800V drain-source voltage rating makes it particularly suitable for high-voltage applications, while maintaining impressive current handling capabilities of 4.5A at 25°C. The device's 1.6Ω RDS(on) at 10V drive voltage ensures minimal power dissipation, translating to cooler operation and extended system lifespan.

Key technical specifications include:

Thermal Performance and Reliability

The STP6N80K5's thermal characteristics truly distinguish it in its class. With 85W power dissipation capability at the case temperature, this TO-220 packaged device outperforms conventional MOSFETs in thermal management. Its through-hole mounting configuration ensures excellent mechanical stability and heat transfer efficiency, making it ideal for high-reliability applications in harsh environments.

The device's gate charge characteristics (7.5nC @ 10V) enable fast switching transitions while maintaining low EMI emissions. This combination of high voltage capability and efficient switching performance makes it particularly valuable in energy-conscious designs such as LED lighting systems, renewable energy inverters, and smart grid applications.

Design Flexibility and Application Scope

Engineers will appreciate the STP6N80K5's wide operating temperature range (-55°C to 150°C) and 30V gate voltage tolerance, which provide exceptional design flexibility. The device's 255pF input capacitance at 100V VDS ensures compatibility with standard gate drivers while maintaining stability in high-frequency operations.

Typical applications include:

• Switch-mode power supplies (SMPS)
• Motor drives and controls
• Solar inverters
• Industrial automation systems
• High-voltage DC-DC converters

When compared to similar devices in its class, the STP6N80K5 demonstrates superior avalanche energy ratings and enhanced body diode recovery characteristics, making it particularly suitable for inductive load switching applications.

Quality and Manufacturing Standards

As part of STMicroelectronics' industrial-grade component portfolio, the STP6N80K5 undergoes rigorous testing to ensure compliance with the most demanding quality standards. The device's active status in ST's product roadmap guarantees long-term supply stability for production environments, while its tube packaging ensures optimal handling protection during manufacturing processes.

Tags: Power Electronics, Semiconductor Devices, Industrial Components, Electronic Design, Electrical Engineering