STP55NF06FP N-Channel MOSFET 60V 50A TO-220FP | STMicroelectronics STripFET II Power Transistor

STP55NF06FP N-Channel MOSFET 60V 50A TO-220FP | STMicroelectronics STripFET II Power Transistor

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STP55NF06FP N-Channel Power MOSFET: High-Performance Switching for Demanding Applications

Engineered for superior efficiency and reliability, the STP55NF06FP from STMicroelectronics represents the cutting-edge STripFET™ II technology. This N-channel power MOSFET delivers 60V voltage tolerance and 50A continuous drain current capacity, making it an ideal solution for high-power switching applications in industrial, automotive, and consumer electronics. With its ultra-low on-resistance (RDS(on)) of just 18mΩ, this device minimizes conduction losses while maintaining exceptional thermal performance through its TO-220FP package.

Key Electrical Characteristics
ParameterValue
Drain-Source Voltage (VDSS)60 V
Continuous Drain Current (ID)50 A @ 25°C
On-Resistance (RDS(on))18 mΩ @ 27.5A, 10V VGS
Gate Charge (QG)60 nC @ 10V VGS
Operating Temperature-55°C to 175°C

Designed for modern power management systems, the STP55NF06FP transistor combines fast switching capabilities with robust thermal management. Its 10V gate drive optimization ensures compatibility with standard PWM controllers while maintaining minimal switching losses. The device's 1300 pF input capacitance (CISS) at 25V VDS enables efficient high-frequency operation, making it particularly suitable for DC-DC converters and motor control circuits.

Package and Mechanical Specifications
FeatureSpecification
Package TypeTO-220-3 Full Pack
Mounting StyleThrough Hole
Power Dissipation30W (TC)
WeightApprox. 3.5g

The TO-220FP package provides enhanced thermal dissipation through its insulated tab design, allowing direct mounting to heatsinks without additional insulation requirements. This mechanical configuration, combined with the device's 30W power dissipation rating, enables reliable operation in harsh thermal environments commonly found in industrial motor drives and automotive power systems.

As part of STMicroelectronics' STripFET II series, the STP55NF06FP MOSFET incorporates advanced features that benefit both circuit performance and system longevity. Its ±20V gate voltage rating provides robustness against transient conditions, while the 4V gate threshold voltage (VGS(th)) ensures clean switching transitions even under varying temperature conditions. The device's 250µA test current specification guarantees consistent performance across production batches.

This power transistor excels in applications requiring high-current switching with minimal energy loss. Typical implementations include:

  • High-efficiency power supplies
  • Electric vehicle charging systems
  • Industrial motor drives
  • Renewable energy inverters
  • High-power LED lighting controllers

The STP55NF06FP's combination of electrical characteristics and mechanical design makes it particularly well-suited for modern power conversion systems targeting higher efficiency standards. Its through-hole mounting configuration provides mechanical stability in vibration-prone environments, while the tube packaging format ensures safe handling during automated assembly processes.

Tags: Power Transistors, High-Efficiency MOSFETs, Automotive Electronics, Industrial Power Supplies, STripFET Technology

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