STP310N10F7 N-Channel MOSFET from STMicroelectronics | 100V 180A TO-220
- Brand: STMicroelectronics
- Product Code: STP310N10F7
- Availability: In Stock
$2.30
- Ex Tax: $2.30
Revolutionizing Power Management with STP310N10F7 DeepGATE™ MOSFET
In today's high-performance electronic systems, selecting the right power transistor can make or break your design. STMicroelectronics' STP310N10F7 N-Channel MOSFET emerges as a game-changer for engineers seeking exceptional efficiency and reliability in demanding applications. This cutting-edge power device combines advanced STripFET™ VII technology with innovative DeepGATE™ design principles to deliver unparalleled performance metrics that push the boundaries of what's possible in power electronics.
Technical Excellence in Power Discrete Design
Engineered for high-current applications, this TO-220 packaged MOSFET boasts an impressive 100V drain-source voltage rating while maintaining a remarkably low on-resistance of just 2.7mΩ at 60A. The device's optimized gate charge characteristics (180nC at 10V) enable rapid switching transitions, making it ideal for modern power conversion systems requiring both efficiency and speed. With a continuous drain current capacity of 180A at 25°C, this device demonstrates exceptional thermal performance that maintains reliability even under extreme operating conditions.
| Parameter | Specification |
|---|---|
| Max Voltage | 100V |
| Continuous Current | 180A |
| On-Resistance | 2.7mΩ |
| Gate Charge | 180nC |
| Operating Temp | -55°C to 175°C |
The STP310N10F7's ±20V gate voltage tolerance provides design flexibility while maintaining robustness against voltage transients. Its 12800pF input capacitance (at 25V) ensures stable operation in high-frequency switching applications. The device's thermal resistance characteristics enable reliable operation in harsh environments, with power dissipation capabilities reaching 315W under optimal cooling conditions.
Applications and System Integration
This versatile power MOSFET excels in a wide range of applications including:
- Industrial motor drives and automation systems
- Renewable energy inverters and battery management solutions
- Automotive powertrain and charging infrastructure
- High-efficiency power supplies and DC-DC converters
- Uninterruptible power systems (UPS)
The TO-220-3 package format offers excellent thermal dissipation through standard heatsink mounting, while maintaining compatibility with traditional through-hole PCB assembly processes. Its 3.8V gate threshold voltage (at 250µA) ensures compatibility with standard logic-level drive circuits, simplifying system integration without compromising performance.
Why Choose STMicroelectronics' STripFET VII Technology?
STMicroelectronics' seventh-generation STripFET™ technology represents a significant advancement in power MOSFET design. The DeepGATE™ structure optimization reduces gate resistance by 30% compared to previous generations, while the advanced trench gate process improves cell density and reduces on-resistance. These innovations translate directly into reduced conduction losses and improved thermal efficiency, allowing designers to create more compact and energy-efficient systems.
As part of STMicroelectronics' comprehensive power management ecosystem, the STP310N10F7 benefits from extensive design resources including SPICE models, thermal simulation tools, and application-specific reference designs. This comprehensive support infrastructure accelerates time-to-market while ensuring optimal device utilization in various operating scenarios.
Tags: Power MOSFET, High Voltage Transistor, TO-220 Package, Automotive Electronics, Industrial Power Devices