STMicroelectronics STP18N60M2 MDmesh™ II Plus MOSFET
- Brand: STMicroelectronics
- Product Code: STP18N60M2
- Availability: In Stock
$0.56
- Ex Tax: $0.56
High-Performance STP18N60M2 N-Channel MOSFET for Demanding Power Applications
STMicroelectronics continues to push the boundaries of power semiconductor technology with its MDmesh™ II Plus series, featuring the STP18N60M2 N-channel MOSFET. This high-voltage transistor combines cutting-edge design with robust performance metrics, making it an ideal choice for engineers working on industrial motor drives, automotive systems, and power conversion equipment. The device's 600V rating and 13A continuous drain current capability enable reliable operation in high-stress environments while maintaining exceptional efficiency levels.
At the heart of the STP18N60M2's impressive performance lies its advanced silicon technology, which achieves an ultra-low on-state resistance of 280mΩ at 10V gate-source voltage. This remarkable specification translates to reduced conduction losses and improved thermal management, allowing designers to create more compact and energy-efficient systems. The device's optimized gate charge characteristics further enhance switching performance, with a maximum Qg of 21.5nC at 10V drive voltage ensuring fast transitions and minimal power dissipation.
| Parameter | Specification |
|---|---|
| Max Voltage | 600V |
| Continuous Current | 13A |
| Rds(on) Max | 280mΩ |
| Gate Charge | 21.5nC |
Engineered for reliability in harsh operating conditions, this TO-220 packaged MOSFET maintains stable performance across extreme temperature ranges (-55°C to 150°C). Its ±25V gate voltage tolerance provides additional design flexibility while maintaining robust short-circuit protection. The device's 791pF input capacitance at 100V makes it particularly well-suited for high-frequency switching applications where dynamic performance is critical.
Industrial designers will appreciate the STP18N60M2's compatibility with standard gate drive circuits, eliminating the need for specialized driver components. The through-hole package ensures secure mounting in demanding environments while facilitating effective heat dissipation through standard heatsinking techniques. With its 110W maximum power dissipation rating (at case temperature), this MOSFET delivers exceptional thermal performance that extends component lifespan and improves system reliability.
As part of STMicroelectronics' MDmesh™ II Plus family, the STP18N60M2 benefits from the company's proprietary manufacturing processes that optimize both vertical and lateral device parameters. This comprehensive approach results in a transistor that excels in both static and dynamic performance metrics, offering design engineers a versatile building block for next-generation power systems. From renewable energy inverters to electric vehicle powertrains, this device provides the performance headroom needed for modern high-power electronics.
Whether you're developing industrial automation equipment or designing advanced motor control systems, the STP18N60M2 offers the perfect combination of voltage capability, current capacity, and thermal performance. Its RoHS-compliant construction and industry-standard TO-220 footprint make it an environmentally responsible choice that simplifies procurement and logistics. Backed by STMicroelectronics' global support network, this MOSFET represents the ideal balance of innovation and practicality for demanding power applications.
Tags: High-Power Transistors, N-Channel MOSFETs, Industrial Electronics, Automotive Components, Power Management