STMicroelectronics STP150N10F7 N-Channel MOSFET 100V 110A TO-220
- Brand: STMicroelectronics
- Product Code: STP150N10F7
- Availability: In Stock
$0.60
- Ex Tax: $0.60
Revolutionizing Power Management: STMicroelectronics STP150N10F7 N-Channel MOSFET
The STMicroelectronics STP150N10F7 N-Channel MOSFET represents the pinnacle of power semiconductor engineering, combining advanced DeepGATE™ and STripFET™ VII technologies to deliver exceptional performance for high-current applications. With its robust 100V rating and 110A continuous drain current capability, this TO-220 packaged device is engineered for demanding power conversion systems requiring both efficiency and reliability.
Technical Excellence in Power Semiconductor Design
This cutting-edge MOSFET leverages STMicroelectronics' proprietary trench-gate technology to achieve industry-leading specifications. The device's 4.2mΩ RDS(on) at 55A/10V operation ensures minimal conduction losses, while its 117nC gate charge rating enables fast switching performance. The ±20V gate voltage tolerance provides design flexibility, and the 8115pF input capacitance at 50V guarantees stable operation in high-frequency applications.
Engineered for thermal efficiency, the STP150N10F7's TO-220 package offers excellent heat dissipation characteristics with a maximum power dissipation rating of 250W at case temperature. Its wide operating temperature range (-55°C to 175°C) makes it suitable for both industrial and automotive environments where thermal stability is critical.
| Parameter | Specification |
|---|---|
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 110A |
| RDS(on) Max | 4.2mΩ |
| Gate Charge | 117nC |
| Operating Temperature | -55°C to 175°C |
Applications Beyond Conventional Limits
This power MOSFET excels in a wide range of applications including DC-DC converters, motor drives, battery management systems, and automotive electronics. Its combination of high current capability and low on-resistance makes it particularly suitable for high-efficiency power supplies and industrial automation equipment. The device's through-hole mounting configuration ensures mechanical stability in vibration-prone environments.
For engineers designing next-generation power systems, the STP150N10F7 offers a perfect balance between performance and reliability. The device's 250W power dissipation rating at case temperature allows for robust thermal management solutions, while its 4.5V gate threshold voltage ensures compatibility with standard logic-level drivers.
Advanced Features for Modern Power Systems
The STP150N10F7 incorporates multiple design innovations that set it apart in the power semiconductor market. Its optimized trench structure minimizes switching losses while maintaining exceptional thermal stability. The device's ruggedized package design ensures long-term reliability in harsh operating conditions, making it an ideal choice for mission-critical applications.
With its comprehensive safety certifications and RoHS compliance, this MOSFET meets the stringent requirements of modern electronics manufacturing. The device's availability in tube packaging simplifies handling and integration into automated production lines.
Tags: Power MOSFET, High Voltage Transistor, Industrial Electronics, Automotive Components, Semiconductor Devices