STMicroelectronics STP11NM60ND N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STP11NM60ND
- Availability: In Stock
$1.00
- Ex Tax: $1.00
The STMicroelectronics STP11NM60ND N-Channel MOSFET represents a breakthrough in power semiconductor technology, delivering exceptional performance for demanding industrial and high-voltage applications. This advanced transistor combines cutting-edge FDmesh™ II technology with robust design specifications to provide engineers with a reliable solution for power conversion systems requiring both efficiency and durability.
High-Performance Specifications for Demanding Applications
Engineered to handle extreme operating conditions, this 600V MOSFET offers a continuous drain current capacity of 10A at 25°C, making it ideal for power supply designs and motor control systems where thermal stability is critical. The device's 450mΩ maximum Rds(on) at 5A and 10V gate drive ensures minimal conduction losses, translating to improved energy efficiency and reduced heat generation in switching applications.
Key Technical Advantages
What truly sets this transistor apart is its comprehensive feature set tailored for modern power electronics:
- ±25V gate voltage tolerance for enhanced reliability
- 30nC gate charge (max) at 10V operation
- 850pF input capacitance at 50V
- 150°C maximum operating temperature rating
These specifications enable the STP11NM60ND to excel in high-frequency switching environments while maintaining thermal stability under heavy load conditions. The TO-220AB package provides excellent thermal dissipation capabilities, allowing the device to maintain its 90W power dissipation rating even in demanding industrial environments.
Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vdss) | 600 V |
| Continuous Drain Current | 10A @ 25°C |
| Rds(on) Max | 450mΩ @ 5A, 10V |
| Gate Charge | 30 nC @ 10V |
| Operating Temperature | 150°C (TJ) |
Industrial Applications and Design Flexibility
This versatile N-Channel MOSFET finds application across a wide range of power electronics systems. Its combination of high voltage capability and thermal stability makes it particularly well-suited for:
- Industrial motor drives and variable frequency systems
- High-voltage DC-DC converters
- Uninterruptible Power Supply (UPS) systems
- Welding equipment and plasma cutting devices
The device's through-hole mounting configuration and TO-220 package facilitate easy integration into existing PCB designs while ensuring reliable mechanical stability. The FDmesh™ II technology platform enables optimized trade-offs between conduction and switching losses, making this transistor adaptable to various circuit topologies including hard-switching and resonant converter designs.
Reliability and Longevity
STMicroelectronics has engineered the STP11NM60ND with long-term reliability in mind. The device's gate oxide technology and advanced packaging materials ensure exceptional resistance to thermal cycling and mechanical stress. The 5V gate threshold voltage (at 250µA) provides stable operation across varying temperature ranges while maintaining compatibility with standard gate drive circuits.
For designers seeking to implement robust power conversion solutions, this MOSFET offers an optimal balance of performance characteristics. Its 600V rating exceeds typical requirements for industrial power systems while maintaining excellent on-state resistance characteristics that minimize power losses during operation.
Design Implementation Considerations
When integrating this transistor into new designs, engineers should consider the following best practices:
- Implement proper heatsinking for continuous operation above 5A
- Use snubber circuits for inductive load applications
- Ensure gate drive circuitry provides clean 10V switching signals
- Monitor junction temperature in high-frequency switching applications
The device's 250µA gate threshold current ensures stable operation across varying temperature ranges while maintaining compatibility with standard gate drive circuits. The 850pF input capacitance at 50V enables fast switching transitions while minimizing driver power requirements.
For systems requiring parallel transistor operation, careful attention to device matching and thermal management is recommended to maximize overall system efficiency and reliability. The transistor's packaging in tubes facilitates easy handling and automated assembly processes.
Tags: N-Channel MOSFET, High Voltage Transistor, Industrial Electronics, Power Management, TO-220 Package