STMicroelectronics STP11NM60 MDmesh™ N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STP11NM60
- Availability: In Stock
$0.80
- Ex Tax: $0.80
High-Performance Power Management with STP11NM60 MDmesh™ MOSFET
Engineered for demanding power applications, STMicroelectronics' STP11NM60 N-Channel MOSFET combines advanced MDmesh™ technology with robust performance characteristics. This 650V, 11A power transistor delivers exceptional efficiency and reliability in switching applications, making it ideal for modern power electronics systems requiring high voltage handling and thermal stability.
Technical Excellence in Power Discrete Design
At the heart of this TO-220AB packaged device lies ST's proprietary MDmesh™ process, optimized for minimal on-state resistance while maintaining exceptional breakdown voltage characteristics. With a maximum Rds(on) of just 450mΩ at 5.5A and 10V gate drive, the STP11NM60 achieves industry-leading conduction efficiency. The device's 650V rating enables reliable operation in high-voltage power supplies, motor drives, and industrial control systems.
Key electrical specifications include:
| Parameter | Value |
| Max Vds | 650V |
| Continuous Drain Current | 11A @ 25°C |
| Rds(on) Max | 450mΩ @ 10V Vgs |
| Gate Charge | 30nC @ 10V |
Thermal Performance and Reliability
The STP11NM60 demonstrates exceptional thermal characteristics with its through-hole TO-220 packaging. The device maintains stable operation up to 150°C junction temperature while delivering 160W power dissipation capability. Its ±25V gate voltage tolerance and 5V threshold voltage specification ensure compatibility with standard gate drive circuits while maintaining safe operating margins.
Designed for longevity, this MOSFET features:
- Advanced avalanche energy rating
- High dv/dt immunity
- Moisture-resistant molding compound
Application Versatility
This versatile N-Channel MOSFET excels in various power conversion applications including:
| Application Type | Typical Use Case |
| Switching Power Supplies | High-efficiency SMPS designs |
| Motors & Actuators | Industrial motor control systems |
| Renewable Energy | Solar inverters and battery systems |
The device's 1000pF input capacitance and optimized switching parameters enable high-frequency operation while maintaining minimal switching losses. Its compliance with RoHS environmental standards and industrial temperature range (-65°C to 150°C) make it suitable for harsh operating environments.
Design Integration Advantages
Engineers will appreciate the STP11NM60's design flexibility, featuring standard TO-220 pinout compatibility and straightforward thermal management requirements. The device's gate charge characteristics (30nC max) enable efficient switching at moderate frequencies while maintaining control over electromagnetic interference (EMI) generation.
When designing with this MOSFET, consider:
- Gate driver capability requirements
- PCB thermal vias for heat dissipation
- Snubber circuit design for high dv/dt applications
Conclusion
As part of STMicroelectronics' MDmesh™ family, the STP11NM60 represents a perfect balance between performance and reliability in power MOSFET technology. Its combination of high voltage capability, low conduction losses, and robust thermal characteristics make it an excellent choice for engineers developing next-generation power systems. With 41,000 units in stock and competitive pricing at $0.80 per unit (MOQ: 1), this device offers exceptional value for both prototyping and volume production.
Tags: STP11NM60, N-Channel MOSFET, 650V, STMicroelectronics, TO-220AB