STMicroelectronics STP11NK50Z MOSFET 500V 10A TO-220AB
- Brand: STMicroelectronics
- Product Code: STP11NK50Z
- Availability: In Stock
$0.45
- Ex Tax: $0.45
High-Performance STP11NK50Z N-Channel MOSFET for Demanding Power Applications
In the realm of high-voltage power management, STMicroelectronics continues to set benchmarks with its SuperMESH™ series of MOSFETs. Among these, the STP11NK50Z stands out as a robust solution engineered to deliver superior performance in industrial, automotive, and consumer electronics. Designed with an N-channel configuration, this 500V, 10A MOSFET housed in a TO-220AB package combines cutting-edge semiconductor technology with rugged reliability, making it a preferred choice for engineers seeking efficiency and durability in power systems.
Technical Excellence in Power Handling
The STP11NK50Z leverages STMicroelectronics' advanced SuperMESH™ technology, a proprietary planar stripe layout that minimizes on-state resistance (RDS(on)) while maintaining exceptional switching performance. With a guaranteed RDS(on) of just 520mΩ at 4.5A and 10V gate-source voltage (VGS), this device ensures minimal conduction losses even under heavy load conditions. Its 500V drain-source voltage rating provides ample headroom for applications requiring isolation from high-voltage transients, including motor drives and power supplies.
Engineered for real-world operating environments, this MOSFET maintains stable performance across extreme temperatures (-55°C to 150°C), with thermal protection built into its design. The ±30V gate-source voltage tolerance enhances reliability in gate driver circuits, while the 68nC gate charge specification enables efficient switching in high-frequency applications like DC-DC converters and lighting ballasts.
| Parameter | Specification |
|---|---|
| Max VDS | 500V |
| Continuous Drain Current | 10A |
| RDS(on) Max | 520mΩ @ 4.5A, 10V |
| Gate Charge | 68nC @ 10V |
| Package | TO-220-3 |
Applications Beyond Standard Power Switching
Beyond basic power switching, the STP11NK50Z excels in specialized applications where its electrical characteristics provide distinct advantages. In solar inverters and uninterruptible power supplies (UPS), its high avalanche energy rating ensures survival during voltage spikes. The device's 125W power dissipation rating (at case temperature) allows for robust thermal design in enclosed systems, while its 1390pF input capacitance optimizes compatibility with standard gate drivers.
Industrial automation systems benefit from its 4.5V gate threshold voltage that guarantees consistent turn-on characteristics across production batches. This parameter stability simplifies circuit design while maintaining consistent system performance over time. The through-hole TO-220 package facilitates easy assembly and reliable mechanical connections in vibration-prone environments like factory automation equipment.
Designing with Confidence
For design engineers, the STP11NK50Z offers a compelling combination of electrical performance and design flexibility. Its active product status ensures long-term availability for production systems, while the established SuperMESH™ technology provides a proven track record across millions of deployed devices. When compared to competing solutions, this MOSFET delivers superior balance between conduction and switching losses, particularly in applications operating at 100kHz and below.
In power supply designs, pairing the STP11NK50Z with STMicroelectronics' STP1H02F05L3 MOSFET creates an optimized high-voltage complementary pair. For motor control applications, its 10A rating comfortably handles single-phase AC induction motors up to 1kW, especially when combined with thermal management features like heatsink pads on the PCB. Design resources including SPICE models and thermal simulation data are readily available through ST's technical support portal.
Tags: Power Management, High Voltage MOSFET, STMicroelectronics Components, TO-220 Packaging, SuperMESH Technology