STMicroelectronics STW70N60M2 N-Channel MOSFET 600V 68A TO-247
- Brand: STMicroelectronics
- Product Code: STW70N60M2
- Availability: In Stock
$1.50
- Ex Tax: $1.50
High-Performance STMicroelectronics STW70N60M2 N-Channel MOSFET: Powering Modern Electronics
STMicroelectronics continues to redefine semiconductor innovation with its STW70N60M2 N-Channel MOSFET, a cutting-edge solution engineered for high-voltage applications requiring exceptional efficiency and reliability. This advanced component combines robust technical specifications with industrial-grade durability, making it an ideal choice for engineers and designers across multiple sectors.
Technical Excellence in Power Management
At the heart of the STW70N60M2's performance lies its 600 V drain-source voltage rating and impressive 68 A continuous drain current capacity, specifications that place it among the most capable MOSFETs in its class. Designed with MDmesh™ II Plus technology, this device achieves an optimal balance between low on-state resistance and high switching efficiency, delivering 40 mΩ maximum Rds(on) at 34 A and 10 V gate-source voltage.
The device's ±25 V gate voltage rating ensures enhanced protection against voltage spikes, while its 118 nC gate charge at 10 V enables rapid switching performance critical for modern power conversion systems. With 5200 pF input capacitance at 100 V and 4 V gate threshold voltage, the STW70N60M2 offers precise control characteristics that minimize power losses in high-frequency applications.
| Parameter | Value |
|---|---|
| Max Voltage | 600 V |
| Continuous Current | 68 A |
| On-Resistance | 40 mΩ |
| Gate Charge | 118 nC |
| Operating Temperature | -55°C to 150°C |
Industrial-Grade Reliability
Housed in a TO-247-3 package, this through-hole device combines mechanical stability with excellent thermal dissipation properties, supporting 450 W maximum power dissipation at case temperature. Its active product status and industrial operating temperature range (-55°C to 150°C) ensure long-term reliability in demanding environments, from factory automation systems to renewable energy converters.
The STW70N60M2's design advantages extend beyond its electrical characteristics. Its metal oxide semiconductor technology provides inherent protection against thermal runaway, while the non-polarizing gate structure simplifies circuit design and improves system stability. These features make it particularly suitable for:
- Switch-mode power supplies (SMPS)
- Motors and actuator control systems
- Solar inverters and energy storage solutions
- Industrial motor drives
- High-voltage DC-DC converters
When compared to competing solutions in the 600 V/60 A category, the STW70N60M2 stands out through its combination of low conduction losses, robust short-circuit withstand capability, and automotive-grade reliability. Its 10 V drive voltage compatibility ensures seamless integration with standard gate driver ICs, simplifying system design while maintaining optimal performance.
Design Advantages
Engineers will appreciate the STW70N60M2's optimized silicon design that reduces both switching and conduction losses, translating directly into improved system efficiency. The device's low gate charge characteristics enable higher switching frequencies without sacrificing efficiency, allowing designers to create more compact power systems with reduced component count.
For procurement teams, the device's tube packaging ensures safe handling and compatibility with automated assembly processes. With STMicroelectronics' global supply chain behind it, the STW70N60M2 offers reliable availability and consistent quality for volume production requirements.
Tags: N-Channel MOSFET, High Voltage Transistor, Industrial Electronics, Power Semiconductor, TO-247 Device