STW5NK100Z N-Channel MOSFET 1000V 3.5A TO-247-3

STW5NK100Z: High-Performance N-Channel MOSFET for Demanding Power Applications

In the realm of power electronics, the STW5NK100Z emerges as a cutting-edge solution for engineers seeking reliability and efficiency in high-voltage environments. This N-channel MOSFET from STMicroelectronics' SuperMESH3™ series combines advanced semiconductor technology with robust design parameters to deliver exceptional performance across industrial, automotive, and energy management applications.

Technical Excellence in Power Management

Engineered with STMicroelectronics' proprietary SuperMESH3™ technology, the STW5NK100Z demonstrates remarkable electrical characteristics. Its 1000V drain-source voltage rating makes it ideal for high-voltage switching applications, while maintaining a continuous drain current capacity of 3.5A at 25°C. The device's low on-resistance (Rds(on)) of 3.7Ω at 1.75A and 10V gate-source voltage ensures minimal conduction losses, translating to improved system efficiency and reduced thermal stress.

Key performance metrics include:

Engineered for Real-World Performance

The STW5NK100Z's ±30V gate-source voltage rating provides enhanced protection against voltage spikes, while its through-hole TO-247-3 packaging ensures reliable thermal management in demanding environments. The device's 125W power dissipation capability (at case temperature) allows operation in high-power scenarios without compromising longevity.

This MOSFET's 4.5V maximum gate threshold voltage (measured at 100µA) enables compatibility with standard gate drive circuits, simplifying system design while maintaining optimal switching performance. Its industrial-grade temperature range (-55°C to 150°C) makes it suitable for deployment in extreme environmental conditions.

Applications and System Integration

The STW5NK100Z's versatile characteristics make it an excellent choice for various applications including:

- Industrial power supplies and converters
- Motor drive circuits
- Renewable energy systems (solar inverters, battery management)
- High-voltage test equipment
- Electric vehicle charging infrastructure

The device's TO-247-3 package facilitates easy integration with standard heatsinking solutions, while its active product status ensures long-term availability for production systems. As part of STMicroelectronics' comprehensive MOSFET portfolio, the STW5NK100Z benefits from the manufacturer's extensive technical support ecosystem.

Why Choose STW5NK100Z?

When evaluating power MOSFET solutions, engineers consistently return to this device for several compelling reasons. Its SuperMESH3™ technology delivers an optimal balance between switching speed and conduction losses, while the 1000V breakdown voltage rating provides critical headroom in high-energy applications. The 59nC gate charge specification enables fast switching transitions, reducing switching losses in high-frequency power conversion circuits.

Compared to alternative solutions in its class, the STW5NK100Z offers superior thermal performance through its TO-247-3 packaging, which effectively dissipates heat even under continuous high-current operation. The device's 1154pF input capacitance value strikes an ideal compromise between gate drive requirements and switching performance, making it adaptable to various controller architectures.

For design engineers facing evolving power management challenges, the STW5NK100Z represents a proven solution that combines cutting-edge semiconductor technology with field-tested reliability. Backed by STMicroelectronics' industry-leading quality standards and comprehensive documentation, this MOSFET provides the foundation for developing robust, high-efficiency power systems that meet modern engineering demands.

Tags: Power Electronics, Industrial MOSFET, High Voltage Transistor, Switching Devices, Through Hole Components