STMicroelectronics STW56N65DM2 N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STW56N65DM2
- Availability: In Stock
$2.90
- Ex Tax: $2.90
High-Performance STW56N65DM2 N-Channel MOSFET for Power Electronics
STMicroelectronics continues to set industry standards with its STW56N65DM2 N-Channel MOSFET, a cutting-edge power transistor engineered for demanding industrial and automotive applications. This advanced component combines high voltage capability with superior thermal management, making it ideal for modern power conversion systems requiring reliability and efficiency.
Key Features of STW56N65DM2
The STW56N65DM2 showcases a robust 650V drain-source voltage rating paired with a continuous drain current capacity of 48A at 25°C. Its optimized design achieves an impressive Rds(on) of just 65mΩ at 24A and 10V gate-source voltage, significantly reducing conduction losses. The device's ±25V gate voltage protection ensures enhanced durability in challenging operating conditions.
| Parameter | Value |
|---|---|
| Max Voltage | 650 V |
| Continuous Current | 48 A |
| Rds(on) Max | 65 mΩ |
| Gate Charge | 88 nC |
Advanced Technology for Superior Performance
Part of ST's MDmesh™ DM2 series, this TO-247 packaged transistor utilizes innovative strip-based technology to minimize parasitic inductance and improve switching characteristics. The device's 4100pF input capacitance at 100V Vds enables efficient high-frequency operation while maintaining excellent thermal stability. With a maximum power dissipation of 360W and operating temperature range from -55°C to 150°C, it excels in both harsh industrial environments and automotive powertrains.
Wide Range of Applications
This versatile N-Channel MOSFET is specifically designed for high-voltage power conversion systems including motor drives, solar inverters, and industrial power supplies. Its through-hole mounting configuration and TO-247-3 package ensure reliable mechanical stability and efficient heat dissipation in demanding applications. The device meets stringent automotive qualification standards, making it suitable for electric vehicle charging systems and onboard power management circuits.
Design Advantages
Engineers benefit from the STW56N65DM2's optimized gate charge characteristics (88nC at 10V) that enable faster switching transitions while minimizing energy losses. The 5V gate threshold voltage at 250µA allows compatibility with standard logic-level drivers, simplifying circuit design. Its built-in thermal protection features and ruggedized silicon structure provide enhanced reliability in over-load conditions.
Tags: Power Management, Industrial Electronics, High Voltage Transistors