STMicroelectronics STW33N60M2 MDmesh™ II Plus N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STW33N60M2
- Availability: In Stock
$0.65
- Ex Tax: $0.65
High-Performance Power Management with STW33N60M2 MOSFET
STMicroelectronics continues to push the boundaries of power electronics with its STW33N60M2 MDmesh™ II Plus N-Channel MOSFET - a cutting-edge solution designed for demanding industrial and high-voltage applications. This advanced semiconductor device combines exceptional electrical performance with robust thermal management capabilities, making it an ideal choice for modern power conversion systems requiring both efficiency and reliability.
Key Technical Advantages
Engineered with ST's proprietary MDmesh™ II Plus technology, this 600V MOSFET delivers outstanding conduction and switching performance. The device's 26A continuous drain current rating at 25°C, combined with an ultra-low RDS(on) of just 125mΩ at 13A/10V, ensures minimal power losses and superior thermal efficiency. Its optimized gate charge (Qg) of 45.5nC at 10V enables fast switching transitions while maintaining control over electromagnetic interference (EMI).
The STW33N60M2's comprehensive protection features include ±25V gate voltage tolerance and a wide operating temperature range (-55°C to 150°C), ensuring reliable operation in harsh environments. The device's 1781pF input capacitance at 100V and 4V gate threshold voltage specification provide excellent compatibility with standard gate drivers while maintaining stable performance across varying operating conditions.
| Parameter | Specification |
|---|---|
| Max Voltage | 600V |
| Continuous Current | 26A |
| RDS(on) | 125mΩ |
| Gate Charge | 45.5nC |
| Package | TO-247-3 |
Industrial Applications
This versatile N-Channel MOSFET excels in a wide range of power electronics applications including industrial motor drives, renewable energy systems, welding equipment, and high-voltage power supplies. Its through-hole TO-247-3 packaging ensures reliable mechanical stability while facilitating efficient heat dissipation in demanding environments. The device's advanced silicon design reduces both conduction and switching losses, making it particularly suitable for high-frequency power conversion systems where efficiency matters most.
Engineers will appreciate the STW33N60M2's compatibility with standard gate drive circuits and its ability to maintain stable performance across varying load conditions. The device's inherent robustness, combined with ST's proven manufacturing quality, ensures extended operational life even under challenging thermal and electrical stress conditions.
Design Flexibility
When designing power systems around the STW33N60M2, engineers benefit from its optimal balance between voltage rating and current handling capability. The device's low thermal resistance (190W power dissipation rating) allows for simplified thermal management solutions, reducing overall system complexity and cost. Its 250µA gate threshold voltage specification ensures stable operation across different temperature ranges while maintaining compatibility with standard control circuits.
As part of STMicroelectronics' comprehensive power management portfolio, the STW33N60M2 works seamlessly with the company's gate drivers and control ICs to create complete system solutions. This compatibility simplifies the design process while ensuring optimal performance across various operating conditions.
Tags: Power MOSFET, N-Channel Transistor, High Voltage Switching, Industrial Electronics, Energy Efficiency