STW26NM60N - High-Performance 600V N-Channel MOSFET | STMicroelectronics

STW26NM60N - High-Performance 600V N-Channel MOSFET | STMicroelectronics

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Revolutionizing Power Electronics with STMicroelectronics STW26NM60N

The STW26NM60N from STMicroelectronics represents a breakthrough in power transistor technology, combining exceptional performance metrics with robust reliability for demanding applications. As part of the MDmesh™ II series, this N-channel MOSFET delivers cutting-edge efficiency and thermal management capabilities that set new industry standards for power semiconductor solutions.

Advanced MOSFET Architecture

Engineered with STMicroelectronics' proprietary MDmesh technology, the STW26NM60N optimizes both on-state resistance and switching performance. This 600V transistor achieves an impressive 165mΩ Rds(on) at 10A/10V, significantly reducing conduction losses in power conversion systems. The device's optimized gate charge of 60nC at 10V enables faster switching transitions while maintaining excellent thermal stability, making it ideal for high-frequency operations.

Designed for rigorous industrial environments, this TO-247-3 packaged MOSFET handles continuous drain currents up to 20A with a maximum operating temperature of 150°C. Its advanced silicon carbide-enhanced structure ensures minimal power dissipation (140W Tc) and exceptional voltage blocking capabilities, while the ±30V gate voltage tolerance provides additional design flexibility.

Technical Excellence in Power Management
ParameterSpecification
Drain-Source Voltage600V
Continuous Drain Current20A
Rds(on) Max165mΩ
Gate Charge60nC
Operating Temperature150°C

These specifications translate into tangible benefits across various applications. The device's low input capacitance (1800pF @ 50V) enhances switching efficiency, while the 4V gate threshold voltage ensures compatibility with standard driver circuits. Its through-hole mounting configuration provides excellent mechanical stability and thermal dissipation in demanding environments.

Industrial Applications and System Integration

Engineers and designers will find the STW26NM60N particularly well-suited for modern power conversion systems requiring high efficiency and compact form factors. Key applications include:

  • Switching power supplies (SMPS)
  • Motor drive inverters
  • Industrial automation equipment
  • Renewable energy systems
  • Welding and plasma cutting devices

The device's exceptional thermal performance and rugged design enable reliable operation in harsh conditions, while its compliance with RoHS standards ensures environmental responsibility. As part of STMicroelectronics' comprehensive power management portfolio, this MOSFET integrates seamlessly with complementary components for complete system solutions.

Performance Advantages

What truly distinguishes the STW26NM60N is its innovative design approach that balances multiple performance factors. The optimized trade-off between conduction and switching losses results in superior overall efficiency compared to conventional MOSFETs. Its advanced packaging technology enhances heat dissipation while maintaining electrical insulation integrity, crucial for high-reliability applications.

The device's inherent reliability is demonstrated through rigorous testing across multiple stress conditions, including accelerated life testing and extreme temperature cycling. These characteristics make it particularly valuable in critical systems where component failure could have significant operational consequences.

Tags: Power Electronics, Semiconductor Devices, Industrial Automation, Energy Efficiency, Electronic Components

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