STW25N80K5 N-Channel MOSFET 800V 19.5A TO-247
- Brand: STMicroelectronics
- Product Code: STW25N80K5
- Availability: In Stock
$3.50
- Ex Tax: $3.50
High-Performance STW25N80K5 MOSFET for Demanding Power Applications
Engineered for excellence in high-voltage power conversion systems, the STW25N80K5 N-Channel MOSFET from STMicroelectronics represents the pinnacle of SuperMESH5™ technology. This advanced power transistor combines exceptional electrical characteristics with robust thermal performance, making it ideal for modern industrial and automotive applications where efficiency and reliability are paramount.
Technical Specifications with Real-World Benefits
Operating at an impressive 800V drain-source voltage rating, this MOSFET delivers 19.5A continuous drain current capacity while maintaining exceptional thermal stability. The device's 260mΩ on-resistance at 10V gate-source voltage significantly reduces conduction losses, translating to measurable energy savings in power supply designs. With 40nC gate charge and 1600pF input capacitance, the STW25N80K5 optimizes switching performance for high-frequency operations.
| Parameter | Value |
|---|---|
| Max Voltage | 800V |
| Continuous Current | 19.5A |
| Rds(on) Max | 260mΩ |
| Package Type | TO-247-3 |
| Operating Temp | -55°C to 150°C |
SuperMESH5™ Technology Advantages
STMicroelectronics' fifth-generation SuperMESH technology provides this device with a unique combination of high breakdown voltage and low on-resistance. The advanced trench gate structure minimizes switching losses while maintaining exceptional avalanche energy ratings. Designers will appreciate the device's inherent stability during dv/dt transients, ensuring reliable operation in harsh electrical environments.
Key features include ±30V gate voltage protection, 5V gate threshold voltage at 100µA, and 250W maximum power dissipation. The through-hole TO-247 package provides excellent thermal dissipation capabilities, making this MOSFET suitable for both continuous and pulsed high-power applications.
Design Versatility and Application Scope
Engineers can confidently deploy the STW25N80K5 in a wide range of power conversion systems including:
- Switching power supplies (SMPS)
- Motor control circuits
- Industrial automation equipment
- Renewable energy systems
- Electric vehicle charging infrastructure
The device's robust design and high thermal stability make it particularly well-suited for applications requiring extended operating lifetimes under continuous load conditions. Its AEC-Q101 qualification ensures automotive reliability standards are fully met.
Performance Comparison with Industry Standards
When compared to conventional 800V MOSFETs, the STW25N80K5 demonstrates significant improvements:
| Feature | Standard MOSFET | STW25N80K5 |
|---|---|---|
| On-Resistance | 350mΩ | 260mΩ |
| Gate Charge | 55nC | 40nC |
| Max Operating Temp | 125°C | 150°C |
| Power Dissipation | 200W | 250W |
These improvements translate directly to system-level benefits including reduced heatsinking requirements, higher switching frequencies, and improved overall efficiency.
Design Considerations and Best Practices
For optimal performance, designers should consider the following recommendations:
- Implement proper gate drive circuitry with 10V supply for minimal Rds(on)
- Use thermal vias in PCB design to enhance heat dissipation
- Implement snubber circuits for inductive load protection
- Ensure proper derating at elevated operating temperatures
- Utilize the device's high dv/dt immunity for improved system stability
When combined with STMicroelectronics' complementary power management ICs and gate drivers, the STW25N80K5 forms the foundation of highly efficient and reliable power conversion systems.
Tags: Power MOSFET, High Voltage Transistor, Industrial Electronics, Automotive Components, Energy Efficient Devices