STW22N95K5 High-Voltage N-Channel MOSFET (950V, 17.5A) - TO-247 Package

STW22N95K5 High-Voltage N-Channel MOSFET (950V, 17.5A) - TO-247 Package

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Revolutionizing Power Management with STW22N95K5 SuperMESH5™ MOSFET

In the evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its STW22N95K5 N-channel MOSFET. This advanced component, part of the Automotive-grade AEC-Q101 certified SuperMESH5™ family, redefines performance standards for high-voltage applications. Designed to deliver exceptional efficiency and reliability, this TO-247 packaged device addresses critical challenges in automotive, industrial, and renewable energy systems.

Technical Excellence in Power Discrete Design

At the heart of the STW22N95K5's superior performance lies its groundbreaking SuperMESH5™ technology. This innovative approach to MOSFET design achieves an unprecedented balance between conduction and switching losses. With a 950V rating and 17.5A continuous drain current capability, this device maintains optimal performance even under extreme conditions. The 330mΩ RDS(on) at 10V drive voltage ensures minimal power dissipation, translating to cooler operation and enhanced system efficiency.

Engineered for demanding environments, the STW22N95K5 features a robust ±30V gate voltage tolerance and 250W power dissipation capacity. Its 1550pF input capacitance at 100V VDS enables rapid switching transitions, making it ideal for high-frequency converters. The 48nC gate charge specification further reduces switching losses, while the 5V gate threshold voltage maintains compatibility with standard driver circuits.

ParameterSpecification
Max Voltage950V
Continuous Current17.5A
RDS(on)330mΩ
Gate Charge48nC
Automotive-Grade Reliability for Critical Applications

The STW22N95K5's AEC-Q101 certification underscores its suitability for automotive power systems. From on-board chargers in electric vehicles to DC-DC converters in hybrid platforms, this MOSFET delivers consistent performance across -55°C to 150°C operating temperatures. Its TO-247 through-hole package ensures mechanical stability while facilitating efficient heat dissipation, crucial for maintaining reliability in engine compartment environments.

Renewable energy systems benefit significantly from this component's characteristics. Solar inverters and energy storage systems leverage its high voltage rating and low conduction losses to maximize energy conversion efficiency. Industrial motor drives and power supplies also gain improved reliability and reduced maintenance requirements through its robust design.

Design Flexibility and System Optimization

Engineers will appreciate the STW22N95K5's compatibility with standard gate drivers and its inherent avalanche energy rating. The device's dynamic performance enables designers to push switching frequencies higher while maintaining efficiency, allowing for smaller magnetic components and overall system miniaturization. Its thermal stability under repetitive stress conditions makes it suitable for hard-switching topologies commonly used in automotive and industrial power supplies.

When implementing this MOSFET in PCB designs, particular attention should be given to gate drive circuitry and thermal management. The through-hole TO-247 package allows for substantial copper area on the drain pad, facilitating effective heat transfer. Designers should consider implementing proper snubber circuits to protect against voltage spikes in inductive switching applications.

Tags: Power MOSFET, Automotive Electronics, High Voltage Transistor, Surface Mount Technology

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