STV300NH02L N-Channel MOSFET 24V 200A 10-PowerSO
- Brand: STMicroelectronics
- Product Code: STV300NH02L
- Availability: In Stock
$6.00
- Ex Tax: $6.00
STV300NH02L: High-Performance Power MOSFET for Demanding Applications
The STV300NH02L from STMicroelectronics represents a pinnacle in power MOSFET technology, combining robust performance with compact design. As part of the STripFET™ III series, this N-channel transistor delivers exceptional efficiency and reliability for high-current applications. With a 24V rating and 200A continuous drain current capacity, it's engineered to excel in automotive, industrial, and power management systems where thermal stability and minimal conduction losses are critical.
Key Technical Advantages
At its core, the STV300NH02L features a groundbreaking 1mΩ RDS(on) specification at 80A and 10V gate-source voltage. This ultra-low on-resistance ensures minimal power dissipation even under heavy load conditions, translating to improved energy efficiency and reduced heat generation. The device's advanced gate charge characteristics (109nC at 10V) enable fast switching performance, making it ideal for high-frequency applications while maintaining low electromagnetic interference (EMI).
| Parameter | Specification |
|---|---|
| Drain-Source Voltage | 24V |
| Continuous Drain Current | 200A (at 25°C) |
| On-Resistance | 1mΩ @ 80A, 10V |
| Gate Charge | 109nC @ 10V |
| Operating Temperature | -55°C to 175°C |
Innovative Packaging Solutions
Housed in a thermally optimized 10-PowerSO exposed bottom pad package, the STV300NH02L achieves superior thermal performance through its enhanced heat dissipation capabilities. This surface-mount design enables automated assembly processes while maintaining mechanical durability in harsh environments. The ±20V gate-source voltage rating provides additional design flexibility, accommodating various gate drive configurations while ensuring long-term reliability.
With its comprehensive feature set, this MOSFET demonstrates STMicroelectronics' commitment to power semiconductor innovation. The device's 300W maximum power dissipation (at case temperature) rating allows for exceptional thermal headroom in demanding applications. Its 7055pF input capacitance at 15V drain-source voltage ensures stable operation in high-speed switching scenarios, while the 2V threshold voltage (at 250µA) enables efficient turn-on characteristics.
Tags: Power MOSFET, Surface Mount Technology, High Current Transistor, Automotive Electronics, Thermal Management