STU3N65M6 MOSFET N-Channel 650V 3.5A by STMicroelectronics
- Brand: STMicroelectronics
- Product Code: STU3N65M6
- Availability: In Stock
$0.30
- Ex Tax: $0.30
Revolutionizing Power Management with STU3N65M6 N-Channel MOSFET
In the ever-evolving landscape of power electronics, STMicroelectronics continues to push boundaries with its MDmesh™ M6 series. The STU3N65M6 stands out as a high-performance N-Channel MOSFET engineered for demanding applications requiring exceptional efficiency and reliability. This 650V, 3.5A transistor represents the perfect synergy between advanced semiconductor technology and practical design considerations, making it an ideal choice for modern power conversion systems.
Technical Excellence in Power Semiconductor Design
At the heart of the STU3N65M6 lies STMicroelectronics' cutting-edge MDmesh™ M6 technology, which delivers groundbreaking performance metrics. With a maximum drain-source voltage of 650V and continuous drain current capability of 3.5A at 25°C, this device excels in high-voltage applications while maintaining exceptional thermal stability. Its optimized RDS(on) of 1.5Ω at 1.75A and 10V gate-source voltage ensures minimal conduction losses, translating to improved system efficiency and reduced heat generation.
| Parameter | Value |
|---|---|
| Max VDS | 650V |
| Continuous Drain Current | 3.5A |
| RDS(on) | 1.5Ω @ 1.75A |
| Gate Charge | 6nC @ 10V |
| Operating Temperature | -55°C to 150°C |
Advanced Features for Enhanced Performance
The STU3N65M6 incorporates several design innovations that set it apart in the competitive MOSFET market. Its ±25V gate-source voltage rating provides enhanced protection against voltage spikes, while the 150pF input capacitance at 100V VDS ensures fast switching capabilities. The device's thermal characteristics are particularly impressive, with a maximum power dissipation of 45W at case temperature, enabling reliable operation even in challenging thermal environments.
Engineered with industrial applications in mind, this transistor demonstrates exceptional robustness through its -55°C to 150°C operating temperature range. The through-hole mounting configuration combined with the I-PAK package offers excellent mechanical stability and ease of integration into various PCB layouts. Unlike conventional MOSFETs, the STU3N65M6 maintains consistent performance across its entire operating range, making it suitable for both continuous and pulsed load scenarios.
Applications and System Integration
This versatile N-Channel MOSFET finds its perfect fit in a wide range of power electronics applications. From industrial motor drives and power supplies to renewable energy systems and electric vehicle charging infrastructure, the STU3N65M6 delivers consistent performance where it matters most. Its exceptional thermal management capabilities make it particularly suitable for high-density designs where space constraints demand components that can operate efficiently at elevated temperatures.
Design engineers will appreciate the device's compatibility with standard gate drive circuits, thanks to its 10V drive voltage requirement and 3.75V maximum threshold voltage. The low gate charge characteristic enables fast switching operations, reducing switching losses and improving overall system efficiency. When combined with its robust short-circuit withstand capability, these features make the STU3N65M6 an ideal choice for hard-switching and resonant converter topologies.
Quality and Reliability Assurance
As part of STMicroelectronics' MDmesh™ M6 series, the STU3N65M6 undergoes rigorous quality control processes to ensure compliance with industry standards. The device's active status in ST's product roadmap guarantees long-term supply stability for production environments. The TO-251-3 package with short leads not only facilitates easy mounting but also enhances the device's mechanical durability in vibration-prone applications.
With its comprehensive safety certifications and adherence to RoHS compliance standards, the STU3N65M6 represents a future-proof solution for power electronics design. The device's thermal shutdown characteristics and inherent avalanche energy ratings provide additional layers of protection, ensuring reliable operation even under unexpected operating conditions.
Tags: Power Management, Industrial Electronics, Semiconductor Components, Energy Efficiency, Electronic Design