STP6NK60Z N-Channel MOSFET by STMicroelectronics

STP6NK60Z N-Channel MOSFET: High-Performance Power Transistor for Demanding Applications

STMicroelectronics' STP6NK60Z N-Channel MOSFET represents the pinnacle of power transistor technology in the SuperMESH™ series. This 600V, 6A device combines advanced silicon design with robust TO-220AB packaging to deliver exceptional performance in switching applications across industrial, automotive, and consumer electronics sectors. With its optimized balance between conduction losses and switching speed, this MOSFET serves as a critical component in modern power conversion systems.

Key Technical Advantages

Engineered for efficiency, the STP6NK60Z features a maximum R_DS(on) of just 1.2Ω at 3A and 10V gate drive. This low on-resistance enables minimal power loss during operation, translating to improved thermal performance and energy efficiency. The device's 600V rating makes it suitable for high-voltage applications while maintaining reliable operation across extreme temperature ranges (-55°C to 150°C).

Key electrical characteristics include:

Advanced Packaging & Thermal Management

Housed in a TO-220-3 through-hole package, the STP6NK60Z offers excellent thermal dissipation capabilities with a maximum power dissipation of 110W (Tc). The package design facilitates easy integration into printed circuit boards while ensuring mechanical stability in demanding environments. The ±30V gate voltage rating provides additional protection against voltage spikes, enhancing device reliability in real-world operating conditions.

SuperMESH™ Technology Benefits

As part of STMicroelectronics' SuperMESH™ family, this MOSFET incorporates advanced charge-balanced technology that optimizes the trade-off between conduction and switching losses. The device's 4.5V gate threshold voltage (at 100µA) ensures compatibility with standard logic-level drivers while maintaining excellent noise immunity. With input capacitance limited to 905pF at 25V, the STP6NK60Z minimizes driver power requirements while maintaining fast switching performance.

Applications & Design Flexibility

This versatile N-Channel MOSFET finds application in various power electronics systems including:

• Switching power supplies
• Motors and actuator control
• Lighting ballasts
• Industrial automation equipment
• Home appliance power stages

The device's through-hole mounting configuration simplifies PCB layout while ensuring robust mechanical connections. Although currently marked as 'Not For New Designs' in product status, the STP6NK60Z remains a proven solution for established applications requiring reliable power switching capabilities.

Engineering Considerations

Designers should note the device's 10V gate drive requirement for optimal performance. The 46nC gate charge parameter indicates moderate driver strength requirements, making it compatible with standard MOSFET drivers. The 905pF input capacitance value should be considered when calculating switching losses and driver power requirements.

Quality & Reliability

STMicroelectronics' commitment to quality is evident in this device's construction, featuring advanced silicon technology combined with proven packaging techniques. The TO-220AB package provides excellent heat dissipation while maintaining electrical insulation properties. With a maximum operating temperature of 150°C, the STP6NK60Z maintains performance integrity in thermally challenging environments.

Tags: Power Transistors, MOSFET Technology, STMicroelectronics Components