STP5NK50Z N-Channel MOSFET | STMicroelectronics High-Voltage Power Transistor

STP5NK50Z N-Channel MOSFET | STMicroelectronics High-Voltage Power Transistor

  • $0.40

  • Ex Tax: $0.40

Qty

STP5NK50Z: Revolutionizing Power Management with STMicroelectronics' SuperMESH™ Technology

In today's rapidly evolving electronics landscape, selecting the right power transistor can make or break a design. STMicroelectronics' STP5NK50Z stands out as a game-changing solution for engineers seeking exceptional performance in high-voltage applications. This N-channel MOSFET, featuring the company's proprietary SuperMESH™ technology, combines robust specifications with reliable operation across diverse industrial and consumer applications.

Technical Excellence in Power Electronics

Engineered for demanding environments, the STP5NK50Z delivers impressive electrical characteristics. With a 500 V drain-source voltage rating and 4.4A continuous drain current, this device operates efficiently even under extreme conditions. The 1.5Ω maximum RDS(on) at 2.2A/10V ensures minimal conduction losses, while the ±30V gate-source voltage tolerance provides enhanced protection against voltage spikes. Its 28 nC gate charge and 535 pF input capacitance optimize switching performance, making it ideal for high-frequency power conversion systems.

ParameterValue
Drain-Source Voltage500V
Continuous Drain Current4.4A
RDS(on) Max1.5Ω @ 2.2A, 10V
Gate Charge28 nC
PackageTO-220
SuperMESH™: The Technology Behind Superior Performance

STMicroelectronics' patented SuperMESH™ technology represents a breakthrough in MOSFET design. This advanced planar stripe technology reduces on-resistance while maintaining exceptional avalanche energy ratings. The result is a device that delivers 70W maximum power dissipation with thermal stability across its -55°C to 150°C operating temperature range. Unlike conventional MOSFETs, the STP5NK50Z maintains consistent performance even during prolonged operation under high-stress conditions.

For power supply designers, this translates to significant advantages in efficiency and reliability. The 4.5V gate threshold voltage enables compatibility with standard logic circuits while maintaining robust short-circuit protection. The through-hole TO-220AB package ensures excellent thermal management for applications requiring sustained high-current operation.

Applications and Industry Impact

The STP5NK50Z's versatility makes it suitable for a wide range of applications, including:

  • Switching Power Supplies
  • Motor Control Systems
  • Industrial Automation Equipment
  • Renewable Energy Inverters
  • Consumer Electronics Power Stages

In power factor correction (PFC) circuits, the device's low gate charge and fast switching characteristics reduce energy losses by up to 15% compared to previous-generation MOSFETs. For motor control applications, its high avalanche energy rating ensures longevity even during frequent load variations. The device's compliance with RoHS standards and Pb-free construction further enhances its appeal for environmentally conscious designs.

Design Considerations and Best Practices

When incorporating the STP5NK50Z into new designs, engineers should consider the following recommendations:

  1. Implement proper heatsinking for continuous operation above 3A
  2. Use gate resistor values between 10-100Ω to optimize switching performance
  3. Ensure proper PCB layout to minimize parasitic inductance
  4. Implement over-temperature protection for sustained high-current applications

While the device's robust design provides inherent protection against common failure modes, following these guidelines maximizes reliability and extends operational lifespan. The TO-220 package's through-hole mounting configuration offers superior mechanical stability compared to surface-mount alternatives, particularly in environments subject to thermal cycling.

Comparative Analysis and Market Position

When compared to competing solutions like the IRF540N and FQP13N50C, the STP5NK50Z demonstrates distinct advantages:

FeatureSTP5NK50ZIRF540NFQP13N50C
Max Voltage500V500V500V
RDS(on) Max1.5Ω2.0Ω2.5Ω
Gate Charge28 nC71 nC34 nC
PackageTO-220TO-247TO-220

This comparison reveals the STP5NK50Z's superior balance of low on-resistance and minimal gate charge, making it particularly well-suited for high-efficiency switching applications where both conduction and switching losses matter.

Future-Proof Power Solution

As industries continue pushing for greater energy efficiency and compact designs, the STP5NK50Z offers a forward-thinking solution that meets modern requirements while maintaining backward compatibility with existing systems. Its combination of high-voltage capability, low losses, and robust packaging makes it a versatile component for next-generation power electronics. With STMicroelectronics' commitment to quality and ongoing technological innovation, designers can rely on this MOSFET to deliver consistent performance today while supporting evolving design needs tomorrow.

Tags: STP5NK50Z, STMicroelectronics MOSFET, N-Channel MOSFET, High Voltage Transistor, TO-220 Package

Be the first to write a review for this product.

Write a review

Note: HTML is not translated!
Bad           Good