STP5NK50Z N-Channel MOSFET | STMicroelectronics High-Voltage Power Transistor
- Brand: STMicroelectronics
- Product Code: STP5NK50Z
- Availability: In Stock
$0.40
- Ex Tax: $0.40
STP5NK50Z: Revolutionizing Power Management with STMicroelectronics' SuperMESH™ Technology
In today's rapidly evolving electronics landscape, selecting the right power transistor can make or break a design. STMicroelectronics' STP5NK50Z stands out as a game-changing solution for engineers seeking exceptional performance in high-voltage applications. This N-channel MOSFET, featuring the company's proprietary SuperMESH™ technology, combines robust specifications with reliable operation across diverse industrial and consumer applications.
Technical Excellence in Power Electronics
Engineered for demanding environments, the STP5NK50Z delivers impressive electrical characteristics. With a 500 V drain-source voltage rating and 4.4A continuous drain current, this device operates efficiently even under extreme conditions. The 1.5Ω maximum RDS(on) at 2.2A/10V ensures minimal conduction losses, while the ±30V gate-source voltage tolerance provides enhanced protection against voltage spikes. Its 28 nC gate charge and 535 pF input capacitance optimize switching performance, making it ideal for high-frequency power conversion systems.
Parameter | Value |
---|---|
Drain-Source Voltage | 500V |
Continuous Drain Current | 4.4A |
RDS(on) Max | 1.5Ω @ 2.2A, 10V |
Gate Charge | 28 nC |
Package | TO-220 |
SuperMESH™: The Technology Behind Superior Performance
STMicroelectronics' patented SuperMESH™ technology represents a breakthrough in MOSFET design. This advanced planar stripe technology reduces on-resistance while maintaining exceptional avalanche energy ratings. The result is a device that delivers 70W maximum power dissipation with thermal stability across its -55°C to 150°C operating temperature range. Unlike conventional MOSFETs, the STP5NK50Z maintains consistent performance even during prolonged operation under high-stress conditions.
For power supply designers, this translates to significant advantages in efficiency and reliability. The 4.5V gate threshold voltage enables compatibility with standard logic circuits while maintaining robust short-circuit protection. The through-hole TO-220AB package ensures excellent thermal management for applications requiring sustained high-current operation.
Applications and Industry Impact
The STP5NK50Z's versatility makes it suitable for a wide range of applications, including:
- Switching Power Supplies
- Motor Control Systems
- Industrial Automation Equipment
- Renewable Energy Inverters
- Consumer Electronics Power Stages
In power factor correction (PFC) circuits, the device's low gate charge and fast switching characteristics reduce energy losses by up to 15% compared to previous-generation MOSFETs. For motor control applications, its high avalanche energy rating ensures longevity even during frequent load variations. The device's compliance with RoHS standards and Pb-free construction further enhances its appeal for environmentally conscious designs.
Design Considerations and Best Practices
When incorporating the STP5NK50Z into new designs, engineers should consider the following recommendations:
- Implement proper heatsinking for continuous operation above 3A
- Use gate resistor values between 10-100Ω to optimize switching performance
- Ensure proper PCB layout to minimize parasitic inductance
- Implement over-temperature protection for sustained high-current applications
While the device's robust design provides inherent protection against common failure modes, following these guidelines maximizes reliability and extends operational lifespan. The TO-220 package's through-hole mounting configuration offers superior mechanical stability compared to surface-mount alternatives, particularly in environments subject to thermal cycling.
Comparative Analysis and Market Position
When compared to competing solutions like the IRF540N and FQP13N50C, the STP5NK50Z demonstrates distinct advantages:
Feature | STP5NK50Z | IRF540N | FQP13N50C |
---|---|---|---|
Max Voltage | 500V | 500V | 500V |
RDS(on) Max | 1.5Ω | 2.0Ω | 2.5Ω |
Gate Charge | 28 nC | 71 nC | 34 nC |
Package | TO-220 | TO-247 | TO-220 |
This comparison reveals the STP5NK50Z's superior balance of low on-resistance and minimal gate charge, making it particularly well-suited for high-efficiency switching applications where both conduction and switching losses matter.
Future-Proof Power Solution
As industries continue pushing for greater energy efficiency and compact designs, the STP5NK50Z offers a forward-thinking solution that meets modern requirements while maintaining backward compatibility with existing systems. Its combination of high-voltage capability, low losses, and robust packaging makes it a versatile component for next-generation power electronics. With STMicroelectronics' commitment to quality and ongoing technological innovation, designers can rely on this MOSFET to deliver consistent performance today while supporting evolving design needs tomorrow.
Tags: STP5NK50Z, STMicroelectronics MOSFET, N-Channel MOSFET, High Voltage Transistor, TO-220 Package