STMicroelectronics STP35N60DM2 N-Channel MOSFET 600V 28A TO-220
- Brand: STMicroelectronics
- Product Code: STP35N60DM2
- Availability: In Stock
$1.60
- Ex Tax: $1.60
High-Performance STP35N60DM2 N-Channel MOSFET for Demanding Power Applications
The STP35N60DM2 from STMicroelectronics represents the cutting-edge MDmesh™ DM2 series of N-channel power MOSFETs, engineered for high-voltage industrial applications requiring superior thermal management and electrical performance. This 600V power transistor combines advanced silicon technology with the robust TO-220 package, delivering exceptional reliability in power conversion systems while maintaining minimal conduction losses.
Designed for modern power electronics, this MOSFET features a remarkable 110mΩ on-resistance (Rds(on)) measured at 14A and 10V gate-source voltage, enabling efficient power delivery in motor drives, renewable energy inverters, and industrial automation equipment. Its advanced trench structure and state-of-the-art manufacturing process ensure stable operation across extreme temperature ranges (-55°C to 150°C), making it ideal for harsh operating environments.
Key Technical Advantages
Engineers will appreciate the device's 2400pF input capacitance (Ciss) at 100V drain-source voltage, which facilitates fast switching operations while maintaining gate drive simplicity. The 54nC gate charge (Qg) at 10V gate-source voltage enables efficient high-frequency operation, reducing switching losses in power supply designs. With ±25V gate-source voltage tolerance and 5V threshold voltage (Vgs(th)) at 250µA, the STP35N60DM2 offers excellent compatibility with standard gate drive circuits while maintaining precise control characteristics.
| Parameter | Value |
|---|---|
| Max Voltage | 600 V |
| Continuous Drain Current | 28A (Tc) |
| On-Resistance | 110mΩ @ 14A, 10V |
| Power Dissipation | 210W (Tc) |
For power supply designers, the device's 210W power dissipation rating at case temperature ensures reliable operation in high-current switching applications. Its through-hole mounting configuration simplifies PCB layout while maintaining excellent thermal dissipation properties, particularly when combined with proper heatsinking techniques.
Industrial Application Versatility
This high-voltage MOSFET excels in various industrial applications including variable frequency drives, uninterruptible power supplies (UPS), welding equipment, and electric vehicle charging systems. The TO-220-3 package provides excellent mechanical stability while maintaining industry-standard pin compatibility, facilitating seamless integration into existing designs.
As part of STMicroelectronics' MDmesh™ DM2 series, the STP35N60DM2 incorporates advanced process technology that optimizes both conduction and switching losses. This balance makes it particularly suitable for hard-switching applications where minimizing energy loss is critical for system efficiency and thermal management. The device's inherent avalanche ruggedness further enhances its reliability in demanding switching environments.
When selecting power MOSFETs for modern industrial electronics, engineers must consider both electrical specifications and thermal management characteristics. The STP35N60DM2's superior thermal performance allows for higher power density designs while maintaining safe operating temperatures, reducing the need for complex cooling solutions in many applications.
Tags: High Voltage MOSFET, Power Transistor, TO-220 Package, Energy Efficient, Industrial Electronics