STP315N10F7 MOSFET N-Channel 100V 180A TO-220
- Brand: STMicroelectronics
- Product Code: STP315N10F7
- Availability: In Stock
$2.40
- Ex Tax: $2.40
Next-Generation Power Management with STP315N10F7 MOSFET
STMicroelectronics continues to redefine power electronics performance with its STP315N10F7 MOSFET - a cutting-edge solution engineered for demanding automotive and industrial applications. This advanced N-channel power transistor combines breakthrough DeepGATE™ technology with STripFET™ VII trench structure to deliver exceptional efficiency, reliability, and thermal management capabilities. As a qualified AEC-Q101 component, this device meets the rigorous requirements of modern automotive systems while maintaining versatility for various power conversion scenarios.
Technical Excellence in Power Transistor Design
At the heart of the STP315N10F7 lies a sophisticated MOSFET architecture optimized for high-current switching applications. With a 100V drain-source voltage rating and 180A continuous drain current capacity, this device excels in high-power environments while maintaining minimal conduction losses. The innovative STripFET™ VII technology enables an impressive 2.7mΩ on-resistance at 60A, significantly reducing power dissipation in critical circuits. This exceptional performance is achieved through advanced trench gate processing and optimized cell density.
| Parameter | Value |
|---|---|
| Max Voltage | 100V |
| Continuous Current | 180A |
| Rds(on) Max | 2.7mΩ @ 10V Vgs |
| Gate Charge | 180nC |
| Operating Temp | -55°C to 175°C |
Advanced Engineering for Real-World Applications
The STP315N10F7's Through Hole TO-220 package combines mechanical durability with superior thermal dissipation. Its ±20V gate voltage tolerance provides enhanced protection against voltage transients, while the 4.5V gate threshold ensures compatibility with standard logic drivers. The device's 12,800pF input capacitance and optimized switching characteristics make it ideal for high-frequency power conversion systems where efficiency matters most.
Designed for automotive excellence, this MOSFET meets the AEC-Q101 stress test qualification standards. Its robust construction and 315W power dissipation rating enable reliable operation in extreme temperature environments, from engine compartments to battery management systems. The device's inherent stability across its -55°C to 175°C operating range makes it suitable for both cold-start conditions and high-temperature industrial processes.
Performance-Driven Applications
This power MOSFET shines in various demanding applications:
- Automotive powertrain systems
- Electric vehicle battery management
- Industrial motor drives
- High-current DC-DC converters
- Renewable energy inverters
Its exceptional current handling capability and thermal performance make it particularly valuable in electric vehicle charging systems and hybrid powertrain architectures where space constraints and thermal management are critical.
Why Choose STP315N10F7?
STMicroelectronics' commitment to innovation is evident in this device's comprehensive feature set. The combination of DeepGATE™ technology with STripFET™ VII trench structure delivers:
- Reduced switching losses through optimized gate charge
- Enhanced thermal management via TO-220 packaging
- Automotive qualification compliance
- Robust short-circuit withstand capability
- Excellent avalanche energy ratings
Engineers benefit from simplified thermal design thanks to the device's high power dissipation capacity and low on-resistance. The TO-220-3 package offers convenient mounting while maintaining excellent electrical isolation characteristics.
Tags: Power Semiconductors, Automotive Electronics, High Current MOSFET, Industrial Power, Electrical Components