STP24N60DM2 MOSFET N-Channel 600V 18A TO-220 Power Transistor
- Brand: STMicroelectronics
- Product Code: STP24N60DM2
- Availability: In Stock
$0.90
- Ex Tax: $0.90
STP24N60DM2 MOSFET: High-Performance Power Transistor for Demanding Applications
Engineered for excellence in power management systems, the STP24N60DM2 N-Channel MOSFET from STMicroelectronics redefines reliability and efficiency. This advanced power transistor combines cutting-edge FDmesh™ II Plus technology with robust design specifications to deliver exceptional performance in high-voltage applications. With its 600V rating and low RDS(on) characteristics, this TO-220 packaged device is ideal for engineers seeking to optimize power conversion efficiency while maintaining thermal stability.
Key Technical Specifications
Drain-Source Voltage (Vdss) | 600 V |
Continuous Drain Current (Id) | 18A @ TC |
On-Resistance (RDS(on)) | 200mΩ @ 9A, 10V |
Gate Charge (Qg) | 29 nC @ 10V |
Operating Temperature | -55°C to 150°C (TJ) |
At the heart of modern power electronics design, the STP24N60DM2 demonstrates remarkable versatility across various applications. Its optimized gate charge characteristics enable fast switching performance, while the ±25V gate-source voltage rating provides enhanced design flexibility. The device's 1055 pF input capacitance at 100V ensures stable operation in high-frequency environments, making it suitable for switch-mode power supplies, motor control systems, and solar inverters.
Advanced Features and Design Benefits
This STMicroelectronics power transistor incorporates multiple design innovations that address critical performance parameters. The device's thermal resistance specifications enable efficient heat dissipation through its TO-220 package, maintaining reliability even under continuous operation at maximum power dissipation of 150W. The threshold voltage of 5V at 250µA allows for precise control in gate drive circuits, while the low on-resistance minimizes conduction losses.
Manufacturers benefit from the device's through-hole mounting configuration, which simplifies PCB assembly while ensuring mechanical stability. The FDmesh™ II Plus technology platform delivers improved current distribution and reduced parasitic inductance, enhancing overall system efficiency. These characteristics make the STP24N60DM2 particularly well-suited for industrial automation equipment, electric vehicle charging systems, and high-efficiency power supplies.
Applications in Modern Power Systems
The versatility of this N-Channel MOSFET extends across multiple industries. In power supply design, its high voltage rating enables compact, efficient AC-DC converters. Industrial motor drives utilize its robust current handling capabilities for precise speed control. Renewable energy systems benefit from its reliable switching performance in solar inverters and energy storage systems. The device also finds application in home appliances requiring efficient power regulation and motor control.
Reliability and Thermal Performance
Engineered for harsh operating environments, the STP24N60DM2 maintains stable performance across extreme temperature ranges. Its thermal shutdown protection ensures safe operation under overload conditions. The device's rugged construction meets industry-standard reliability requirements, with proven performance in accelerated life testing. The TO-220 package provides excellent thermal coupling to heatsinks, enabling efficient thermal management in high-power applications.
Tags: N-Channel Transistor, High Voltage MOSFET, Power Management, TO-220 Package, Semiconductor Device