STMicroelectronics STP22NM60N N-Channel MOSFET Transistor
- Brand: STMicroelectronics
- Product Code: STP22NM60N
- Availability: In Stock
$0.55
- Ex Tax: $0.55
High-Performance STP22NM60N N-Channel MOSFET for Power Electronics Applications
STMicroelectronics' STP22NM60N N-Channel MOSFET represents a significant advancement in power semiconductor technology, offering engineers and designers a reliable solution for high-voltage switching applications. This advanced transistor combines cutting-edge MDmesh™ II technology with robust thermal management features, making it ideal for demanding environments in power supplies, motor control systems, and industrial automation equipment.
Technical Excellence in a Compact TO-220 Package
Housed in a standard TO-220AB through-hole package, the STP22NM60N delivers exceptional performance metrics that set it apart in the 600V transistor category. Its optimized design achieves an impressive RDS(on) of just 220mΩ at 10V gate drive, ensuring minimal conduction losses and improved energy efficiency. The device maintains stable operation across extreme temperature ranges (-55°C to 150°C), demonstrating exceptional thermal stability and long-term reliability.
Key electrical characteristics include:
| Parameter | Value |
| VDSS | 600V |
| ID | 16A (Tc) |
| RDS(on) | 220mΩ @ 8A, 10V |
| Qg | 44nC @ 10V |
Advanced Features for Demanding Applications
The STP22NM60N incorporates several innovative design elements that enhance its performance in real-world applications. Its ±30V gate voltage tolerance provides greater design flexibility while maintaining robustness against voltage transients. The device's 1300pF input capacitance (Ciss) at 50V operating voltage ensures fast switching characteristics, making it suitable for high-frequency power conversion circuits. With a maximum power dissipation rating of 125W (Tc), this transistor can handle demanding power requirements in compact designs.
Key advantages include:
- Optimized MDmesh™ II technology for reduced on-state resistance
- High current capability with excellent thermal conductivity
- Integrated protection features for enhanced reliability
- Cost-effective solution for industrial and consumer applications
Industrial and Commercial Applications
This versatile N-channel MOSFET finds application in a wide range of power electronics systems including:
- Switch-mode power supplies (SMPS)
- Motor drives and variable frequency drives
- Solar inverters and energy storage systems
- Uninterruptible power supplies (UPS)
- Industrial automation and control systems
The STP22NM60N's combination of high voltage capability, low conduction losses, and robust thermal performance makes it particularly well-suited for applications requiring efficient power management and reliable operation under demanding conditions.
Design Considerations and Implementation
When implementing the STP22NM60N in circuit designs, engineers should consider its gate drive requirements (4V threshold voltage) and ensure proper heatsinking for high-current applications. The device's 44nC gate charge characteristic enables fast switching transitions, which should be carefully managed to minimize electromagnetic interference (EMI) in high-frequency applications. Designers will appreciate the device's compatibility with standard gate driver ICs and its ease of integration into existing power management architectures.
Comparative Performance Analysis
Compared to competing solutions in the 600V N-channel MOSFET market, the STP22NM60N offers several distinct advantages:
| Parameter | This Product | Competitor A | Competitor B |
| RDS(on) | 220mΩ | 250mΩ | 280mΩ |
| Qg | 44nC | 50nC | 55nC |
| Max VGS | ±30V | ±20V | ±20V |
| ID | 16A | 14A | 15A |
This performance comparison demonstrates the STP22NM60N's superior specifications in critical parameters that directly impact circuit efficiency and reliability.
Quality and Reliability Assurance
STMicroelectronics maintains rigorous quality control standards for the STP22NM60N, ensuring consistent performance across production batches. The device meets industry-standard reliability requirements and is manufactured using proven semiconductor fabrication processes. With its active product status and comprehensive technical support, this MOSFET represents a future-proof solution for power electronics designers seeking both performance and longevity in their component selections.
Tags: Power Electronics, Semiconductor Devices, Industrial Components, Electronic Parts, Power Management