STP14NM50N N-Channel MOSFET 500V 12A TO-220 Power Transistor
- Brand: STMicroelectronics
- Product Code: STP14NM50N
- Availability: In Stock
$0.60
- Ex Tax: $0.60
High-Performance STP14NM50N N-Channel MOSFET for Demanding Power Applications
The STP14NM50N from STMicroelectronics represents a breakthrough in power transistor technology, combining robust performance characteristics with reliable operation in high-voltage environments. This advanced N-channel MOSFET delivers exceptional efficiency and thermal management capabilities, making it an ideal choice for modern power electronics systems requiring both precision and durability.
Technical Excellence in Power Semiconductor Design
Engineered with STMicroelectronics' proprietary MDmesh™ II technology, the STP14NM50N achieves an optimal balance between on-state resistance and switching performance. With a maximum drain-source voltage rating of 500V and continuous drain current capacity of 12A, this device is specifically designed to excel in high-voltage applications while maintaining exceptional energy efficiency. The device's 320mΩ maximum Rds(on) at 6A and 10V gate-source voltage ensures minimal conduction losses, translating to improved system efficiency and reduced thermal stress.
The transistor's comprehensive specification includes a gate charge of 27nC at 10V, enabling fast switching transitions while maintaining control over electromagnetic interference (EMI) levels. Its ±25V gate-source voltage rating provides enhanced operational flexibility, while the 4V maximum threshold voltage ensures reliable turn-on characteristics across various operating conditions. The device's thermal performance is further enhanced through its TO-220 package, which facilitates effective heat dissipation with a maximum power dissipation rating of 90W at case temperature.
Parameter | Specification |
---|---|
Max Voltage | 500V |
Continuous Current | 12A |
On-Resistance | 320mΩ |
Gate Charge | 27nC |
Package | TO-220 |
Advanced Features for Enhanced System Performance
The STP14NM50N incorporates several innovative features that contribute to its superior performance profile. The device's input capacitance of 816pF at 50V ensures stable operation in high-frequency switching applications, while maintaining excellent dv/dt immunity. Its operating temperature range of -55°C to 150°C enables deployment in challenging environmental conditions, from industrial automation systems to automotive powertrains. The through-hole mounting configuration simplifies PCB integration while ensuring mechanical stability in vibration-prone environments.
Key technical advantages include:
- Optimized for high-efficiency power conversion systems
- Excellent thermal stability across operating range
- Robust short-circuit withstand capability
- Low leakage current characteristics
- Compliant with RoHS environmental standards
Wide Range of Industrial Applications
This versatile power transistor finds application in diverse industries, from renewable energy systems to industrial motor drives. Its 500V rating makes it particularly suitable for:
Industrial power supplies where high voltage isolation and efficiency are critical
Motor control systems requiring precise power delivery and thermal management
Lighting ballasts operating in high-voltage AC environments
Renewable energy inverters needing reliable high-voltage switching components
Consumer electronics power management circuits demanding space-efficient solutions
When compared to competing solutions in the TO-220 package category, the STP14NM50N stands out through its combination of low on-resistance, high voltage capability, and proven reliability in extended operation. The device's packaging in standard tubes simplifies handling and storage while ensuring component protection during transportation and inventory management.
Design Considerations and Implementation Best Practices
For optimal performance, designers should consider several implementation factors when integrating the STP14NM50N into their circuits. Proper heatsinking is recommended for applications exceeding 75W dissipation to maintain junction temperatures within safe operating limits. Gate drive circuits should be designed to minimize parasitic inductance, taking advantage of the device's 27nC gate charge characteristic for fast switching transitions. Input capacitance considerations (816pF at 50V) should inform PCB layout decisions to minimize high-frequency noise coupling.
Thermal management strategies should account for the device's 90W maximum power dissipation rating at case temperature, ensuring adequate airflow or heatsink capacity for continuous operation. Designers should also consider the device's 100µA threshold voltage specification when developing gate control circuits to ensure reliable turn-on characteristics across varying load conditions.
Reliability and Long-Term Performance
STMicroelectronics' commitment to quality is evident in the STP14NM50N's design and manufacturing process. The device undergoes rigorous testing to ensure compliance with industry reliability standards, including accelerated life testing and thermal cycling validation. Its active product status indicates ongoing manufacturing support and availability, providing design engineers with confidence in long-term component supply for their projects.
In conclusion, the STP14NM50N N-channel MOSFET represents a comprehensive solution for high-voltage power switching applications. Its combination of electrical performance, thermal management capabilities, and proven reliability makes it a compelling choice for designers seeking to optimize their power electronics systems. Whether implementing new designs or upgrading existing systems, this device offers the technical specifications and practical benefits necessary to meet modern engineering challenges in power conversion and control.
Tags: Power Electronics, High Voltage, N-Channel MOSFET, Industrial Applications, TO-220 Package