STMicroelectronics STP13NM60N N-Channel MOSFET 600V 11A TO-220-3
- Brand: STMicroelectronics
- Product Code: STP13NM60N
- Availability: In Stock
$0.52
- Ex Tax: $0.52
High-Performance STP13NM60N N-Channel MOSFET for Demanding Power Applications
STMicroelectronics continues to set industry benchmarks with its STP13NM60N N-Channel MOSFET, a cutting-edge semiconductor device engineered for high-voltage power management systems. This advanced MOSFET combines superior electrical characteristics with robust thermal performance, making it an ideal choice for engineers seeking reliable power solutions in industrial, automotive, and consumer electronics applications.
At the heart of the STP13NM60N's impressive performance lies its 600V drain-source voltage rating, which enables efficient operation in high-voltage environments while maintaining exceptional reliability. The device's 11A continuous drain current capability ensures stable power delivery even under demanding conditions, making it particularly well-suited for power supply designs, motor control systems, and lighting applications.
Key Technical Advantages
Engineered with STMicroelectronics' proprietary MDmesh™ II technology, this MOSFET achieves an optimal balance between conduction and switching losses. The device features a remarkably low RDS(on) of 360mΩ at 5.5A and 10V gate-source voltage, significantly reducing power dissipation and improving overall system efficiency. Its advanced gate charge characteristics (30nC max @ 10V) enable fast switching performance while maintaining control over electromagnetic interference (EMI) levels.
The STP13NM60N's thermal management capabilities are equally impressive, with a maximum power dissipation rating of 90W at case temperature. This exceptional thermal performance allows designers to create compact power systems without compromising reliability, even in high-temperature operating environments ranging from -55°C to 150°C.
Application Versatility
This TO-220 packaged MOSFET offers exceptional versatility across multiple domains:
- Switching power supplies (SMPS) for industrial equipment
- Motor drive circuits for automation systems
- Lighting ballasts and LED drivers
- Consumer electronics power management
- Automotive electronics systems
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 11A @ 25°C |
| RDS(on) Max | 360mΩ @ 5.5A |
| Gate Charge | 30nC @ 10V |
| Operating Temperature | -55°C to 150°C |
For designers seeking to optimize power system performance, the STP13NM60N offers an ideal combination of high-voltage capability, low on-resistance, and excellent thermal management. The device's ±25V gate-source voltage rating provides additional design flexibility while ensuring robust protection against voltage transients.
Available in standard TO-220-3 packaging, this MOSFET simplifies PCB layout while maintaining excellent heat dissipation characteristics. Its through-hole mounting configuration ensures reliable mechanical stability in various operating environments, while the 790pF input capacitance (at 50V VDS) enables efficient high-frequency operation.
Why Choose STP13NM60N?
As part of STMicroelectronics' renowned MDmesh™ family, this MOSFET benefits from decades of semiconductor innovation and manufacturing expertise. The device's advanced silicon technology delivers superior performance metrics compared to conventional power MOSFETs, including reduced switching losses, enhanced avalanche energy ratings, and improved short-circuit withstand capability.
Whether you're designing next-generation power supplies, industrial automation systems, or high-efficiency lighting solutions, the STP13NM60N provides the performance headroom and reliability required for modern electronic systems. Its comprehensive protection features and robust design make it a trusted component for mission-critical applications where failure is not an option.
Tags: Power Management, High Voltage MOSFET, TO-220 Package, Electronic Components, Industrial Electronics