STMicroelectronics STP11NM80 N-Channel MOSFET 800V 11A TO-220AB
- Brand: STMicroelectronics
- Product Code: STP11NM80
- Availability: In Stock
$1.50
- Ex Tax: $1.50
STP11NM80: High-Performance N-Channel MOSFET for Demanding Applications
In the realm of power electronics, the STP11NM80 N-Channel MOSFET from STMicroelectronics emerges as a robust solution for engineers and designers seeking reliability and efficiency. This advanced transistor combines high voltage tolerance, optimized current handling, and thermal resilience to meet the demands of industrial, automotive, and high-power systems. With a rated drain-source voltage (VDSS) of 800V and a continuous drain current (ID) of 11A at 25°C, the STP11NM80 delivers exceptional performance in applications ranging from motor drives to renewable energy systems.
Technical Excellence in Power Management
At the heart of the STP11NM80 lies STMicroelectronics' MDmesh™ technology, which minimizes on-state resistance (RDS(on)) while maintaining high breakdown voltage capabilities. This transistor achieves a maximum RDS(on) of just 400mΩ at 5.5A and 10V gate-source voltage (VGS), ensuring minimal conduction losses. Its gate charge (Qg) of 43.6nC at 10V enables fast switching performance, making it ideal for high-frequency applications in power converters and motor control circuits.
Key Electrical Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 800V |
| Continuous Drain Current (ID) | 11A |
| RDS(on) (Max) | 400mΩ |
| Gate Charge (Qg) | 43.6nC |
The device's ±30V gate-source voltage rating (VGS(max)) provides enhanced robustness against voltage spikes, while its 150W power dissipation capability (at Tc) ensures stable operation under heavy loads. The transistor maintains functionality across an industrial temperature range of -65°C to 150°C (TJ), making it suitable for harsh environments.
Industrial and Automotive Applications
Designed for through-hole mounting in a TO-220AB package, the STP11NM80 offers excellent thermal management through its robust TO-220-3 case. This makes it a preferred choice for:
- Industrial motor drives and inverters
- Automotive power systems
- Renewable energy converters (solar inverters)
- High-voltage DC power supplies
- Electric vehicle charging infrastructure
Its low input capacitance (Ciss of 1630pF at 25V) reduces switching losses in high-frequency applications, while the 5V gate threshold voltage (VGS(th)) ensures compatibility with standard logic-level drivers.
For designers working on next-generation power systems, the STP11NM80 represents a perfect balance of performance and reliability. Its combination of high voltage ratings, low on-resistance, and rugged packaging addresses the evolving demands of modern electronics while maintaining backward compatibility with existing TO-220 designs.
Tags: Power Transistors, High Voltage Components, Industrial Electronics, Automotive Components, MOSFET Technology