STN1NK80Z N-Channel MOSFET from STMicroelectronics - 800V 250mA SOT-223

High-Performance STN1NK80Z N-Channel MOSFET for Demanding Power Applications

In the evolving landscape of power electronics, STMicroelectronics continues to set benchmarks with its SuperMESH™ technology. The STN1NK80Z N-Channel MOSFET exemplifies this innovation, offering engineers a robust solution for high-voltage switching applications. This 800V, 250mA device in a compact SOT-223 package combines exceptional electrical characteristics with thermal reliability, making it ideal for modern power conversion systems where space constraints and efficiency are critical.

Technical Excellence in Power Management

At the heart of the STN1NK80Z lies STMicroelectronics' advanced Power MOSFET architecture. With a maximum drain-source voltage (V_DSS) of 800V and a continuous drain current of 250mA at 25°C, this device excels in applications requiring high breakdown voltage tolerance. Its 16Ω R_DS(on) measured at 500mA and 10V gate-source voltage ensures minimal conduction losses, while the ±30V gate-source voltage rating provides exceptional robustness against voltage transients.

The device's 7.7nC gate charge (Q_g) at 10V drive voltage enables fast switching performance, crucial for improving efficiency in high-frequency operations. Its 160pF input capacitance at 25V V_DS further contributes to reduced switching losses, making it particularly suitable for applications in power supplies, motor control circuits, and industrial automation systems.

Engineered for Reliability

Built on STMicroelectronics' proven SuperMESH™ technology, the STN1NK80Z achieves an optimal balance between on-state resistance and capacitance characteristics. The device's SOT-223 package offers excellent thermal dissipation capabilities despite its compact footprint, with a power dissipation rating of 2.5W at case temperature. This thermal efficiency, combined with a wide operating temperature range (-55°C to 150°C), ensures reliable performance in demanding environments including automotive systems, industrial controls, and consumer electronics.

The MOSFET's surface-mount design facilitates automated assembly processes while maintaining mechanical stability in vibration-prone applications. Its TO-261-4 package configuration provides a secure mounting solution that enhances long-term reliability in continuous operation scenarios.

Design Flexibility and Application Scope

Engineers will appreciate the STN1NK80Z's versatility across multiple domains. Its high voltage capability makes it particularly suitable for:

• Switch-mode power supplies (SMPS)
• Motor drive circuits
• Industrial automation equipment
• Consumer electronics power stages
• General-purpose switching applications

The device's 4.5V gate threshold voltage (V_GS(th)) at 50µA enables compatibility with standard logic-level gate drivers, simplifying circuit design while maintaining efficient operation. This characteristic proves particularly valuable in battery-powered systems where drive voltage optimization is crucial.

Future-Proof Power Solution

As industries transition toward more energy-efficient systems, the STN1NK80Z positions itself as a future-ready component. Its compliance with RoHS standards and Pb-free construction aligns with global environmental regulations. The device's tape-and-reel packaging format supports modern logistics requirements, ensuring seamless integration into high-volume production workflows.

When reliability, performance, and design flexibility matter most, the STN1NK80Z N-Channel MOSFET from STMicroelectronics emerges as a compelling choice. Whether you're developing cutting-edge power supplies, industrial control systems, or next-generation consumer electronics, this device offers the technical specifications and proven reliability needed to bring your designs to life.

Tags: Power Management, High Voltage MOSFET, Industrial Automation, Surface Mount Technology, Power Conversion