STMicroelectronics STW7N105K5 SuperMESH5™ N-Channel MOSFET | 1050V 4A TO-247

Revolutionizing Power Management: STMicroelectronics STW7N105K5 SuperMESH5™ MOSFET

Engineered for high-voltage applications requiring exceptional efficiency and reliability, the STW7N105K5 SuperMESH5™ N-Channel MOSFET from STMicroelectronics sets a new benchmark in power semiconductor technology. This advanced component combines cutting-edge design with robust performance metrics, making it an ideal choice for industrial engineers and designers seeking optimal power management solutions.

Advanced Technology for Demanding Applications

At the heart of this MOSFET lies ST's proprietary SuperMESH5™ technology, which delivers unprecedented performance through its innovative charge-balanced structure. This architecture enables the device to maintain exceptional conductivity while withstanding extreme voltages up to 1050V, making it particularly suitable for demanding environments like renewable energy systems, industrial motor drives, and high-frequency power supplies.

Key technical specifications include:

Optimized for Real-World Performance

Unlike conventional MOSFETs that struggle with switching losses at high voltages, the STW7N105K5's 10V drive voltage ensures minimal conduction losses while maintaining fast switching characteristics. This translates to improved energy efficiency and reduced thermal stress in applications such as solar inverters, uninterruptible power supplies (UPS), and industrial automation systems.

The device's ±30V gate voltage rating provides enhanced robustness against voltage spikes, while its 110W power dissipation capability (at TC) ensures reliable operation even under continuous load conditions. With operating temperatures spanning from -55°C to 150°C, this component maintains performance stability across extreme environmental conditions.

Design Advantages in Modern Electronics

The TO-247-3 package format offers excellent thermal management properties while maintaining compatibility with standard through-hole mounting processes. This makes the STW7N105K5 particularly valuable for designers seeking to implement high-voltage solutions without requiring specialized PCB manufacturing techniques.

When compared to traditional silicon-based MOSFETs, this device demonstrates superior figures of merit (FOM) through its optimized balance of on-resistance and gate charge. The 380pF input capacitance at 100V VDS further enhances switching performance, reducing both turn-on and turn-off losses in high-frequency applications.

Comprehensive Reliability Features

Engineered with industrial-grade reliability in mind, this MOSFET incorporates multiple protective characteristics:

• Thermal shutdown protection
• Avalanche energy rating
• Short-circuit withstand capability

These features make it particularly well-suited for mission-critical applications in industrial automation, where component failure could result in significant operational disruptions.

Future-Proof Power Solutions

As industries transition toward more energy-efficient systems, the STW7N105K5's combination of high voltage capability and low conduction losses positions it as an ideal component for next-generation power electronics. Its compatibility with modern control topologies like LLC resonant converters and active clamp circuits ensures designers can maximize system efficiency while maintaining component longevity.

Whether you're developing high-voltage DC power supplies, industrial welding equipment, or advanced motor control systems, this MOSFET offers the performance characteristics needed to create cutting-edge solutions that meet evolving energy efficiency standards.

Tags: Semiconductor Devices, Power Management, Industrial Electronics, Electronic Components, Circuit Design