STMicroelectronics STW55NM60ND MOSFET N-Channel 600V 51A TO-247-3
- Brand: STMicroelectronics
- Product Code: STW55NM60ND
- Availability: In Stock
$7.00
- Ex Tax: $7.00
STMicroelectronics STW55NM60ND: High-Performance Power MOSFET for Demanding Applications
Engineered for high-efficiency power management, the STW55NM60ND from STMicroelectronics represents the cutting-edge FDmesh™ II series of N-channel MOSFETs. This advanced transistor combines robust electrical characteristics with thermal resilience, making it ideal for industrial, automotive, and high-power switching applications where reliability and performance intersect.
Key Technical Advantages
Operating at a staggering 600 V drain-source voltage, this MOSFET delivers 51A continuous drain current capacity while maintaining minimal conduction losses. Its ultra-low 60mΩ on-state resistance ensures maximum power transfer efficiency, reducing thermal stress in high-current environments. The device's ±25V gate-source voltage tolerance provides exceptional gate control stability, while its 190nC gate charge enables fast switching transitions for high-frequency operations.
| Parameter | Value |
|---|---|
| Max Voltage | 600V |
| Max Current | 51A |
| Rds(on) | 60mΩ |
| Package | TO-247-3 |
Beyond Specifications: Real-World Performance
The STW55NM60ND's 5800pF input capacitance and 5V gate threshold voltage create optimal conditions for precise motor control and power conversion systems. Its 350W power dissipation rating at operating temperature guarantees sustained performance in demanding environments like electric vehicle charging systems, industrial motor drives, and renewable energy inverters. The through-hole TO-247-3 package ensures mechanical durability while maintaining excellent thermal dissipation characteristics.
As part of STMicroelectronics' FDmesh™ II series, this MOSFET incorporates advanced silicon technology that minimizes electromagnetic interference (EMI) while maintaining exceptional avalanche energy ratings. The device's 150°C operating temperature rating allows deployment in thermally challenging environments without performance degradation, making it particularly valuable for automotive powertrain applications.
Comprehensive Design Integration
Engineers will appreciate the component's 250µA gate threshold current that simplifies drive circuit design while maintaining compatibility with standard 10V gate drive voltages. The obsolete but available status makes this device particularly valuable for legacy system maintenance and end-of-life product support where specification continuity is critical. Available in tube packaging, it maintains component integrity during storage and handling while facilitating automated assembly processes.
Whether implementing high-efficiency DC-AC inverters, designing industrial power supplies, or upgrading legacy motor control systems, the STW55NM60ND offers a proven combination of electrical performance and field-proven reliability. Its technical specifications align perfectly with modern power electronics requirements while maintaining backward compatibility with established design architectures.
Tags: Power Transistors, Industrial Semiconductors, High Voltage MOSFET