STMicroelectronics STW40N60M2 N-Channel MOSFET 600V 34A TO-247
- Brand: STMicroelectronics
- Product Code: STW40N60M2
- Availability: In Stock
$1.50
- Ex Tax: $1.50
High-Performance STW40N60M2 N-Channel MOSFET for Demanding Power Applications
Engineered for superior performance in high-voltage power systems, the STW40N60M2 from STMicroelectronics represents the cutting edge of MDmesh™ II Plus series technology. This N-Channel MOSFET combines advanced silicon design with robust TO-247 packaging to deliver exceptional efficiency and reliability in industrial and commercial power electronics applications.
Advanced Technical Specifications
With its 600V drain-source voltage rating and 34A continuous drain current capability, this device is optimized for high-power switching applications. The integrated 88mΩ RDS(on) at 17A/10V ensures minimal conduction losses, while the 57nC gate charge enables fast switching transitions. Operating within ±25V gate voltage limits, the STW40N60M2 maintains stable performance across extreme temperature ranges (-55°C to 150°C), making it suitable for demanding environments.
The device's 2500pF input capacitance at 100V VDS and 4V gate threshold voltage (at 250µA) enable precise control in modern power conversion systems. Its 250W power dissipation rating (at TC) supports sustained operation under heavy load conditions.
| Parameter | Value |
|---|---|
| Max Voltage | 600V |
| Continuous Current | 34A |
| RDS(on) | 88mΩ @ 17A |
| Gate Charge | 57nC |
| Package | TO-247-3 |
Industrial Applications
This high-performance MOSFET excels in a wide range of applications including:
- Switching power supplies
- Motors drives and inverters
- Industrial automation systems
- Renewable energy converters
- Electric vehicle charging infrastructure
Its through-hole mounting design and TO-247 package provide excellent thermal management, ensuring reliable operation in high-current power circuits. The device's inherent design stability makes it particularly suitable for applications requiring consistent performance over extended periods.
Technology Advantages
As part of STMicroelectronics' MDmesh™ II Plus series, the STW40N60M2 incorporates advanced super-junction technology that dramatically reduces on-resistance while maintaining exceptional avalanche energy ratings. This technological advancement translates to improved system efficiency and reduced operating temperatures compared to conventional MOSFETs.
The device's optimized gate structure minimizes switching losses while maintaining excellent short-circuit withstand capability. This combination of features enables designers to create more compact power systems with enhanced thermal performance and higher power density.
Quality and Reliability
Manufactured under STMicroelectronics' stringent quality control systems, the STW40N60M2 meets industrial-grade reliability standards. Its robust silicon design and proven packaging technology ensure long-term stability in harsh operating environments, reducing maintenance requirements and extending equipment service life.
This MOSFET complies with the latest industry standards for power semiconductor devices, making it suitable for critical applications where component reliability directly impacts system performance. The device's inherent design stability and process consistency ensure uniform performance across production batches.
Tags: Power MOSFET, N-Channel Transistor, High Voltage MOSFET, TO-247 Package, MDmesh II Plus Series