STMicroelectronics STW10N95K5 N-Channel MOSFET 950V 8A TO-247

Revolutionizing Power Management with STMicroelectronics STW10N95K5 MOSFET

Engineered for high-performance power applications, the STMicroelectronics STW10N95K5 N-Channel MOSFET represents the cutting edge of semiconductor technology. This advanced component combines robust 950V breakdown voltage capability with efficient 8A current handling in a compact TO-247 package. Designed for demanding industrial environments, this SuperMESH5™ series transistor delivers exceptional reliability while maintaining optimal thermal performance.

Technical Excellence in Power Electronics

At its core, the STW10N95K5 features a meticulously optimized silicon structure that achieves an impressive 800mΩ maximum RDS(on) at 4A and 10V gate-source voltage. This low on-state resistance translates to significant power savings and reduced heat generation in switching applications. With a gate charge rating of 22nC at 10V and input capacitance of 630pF at 100V, this MOSFET ensures rapid switching transitions while maintaining stability in high-frequency operations.

Industrial-Grade Reliability

Built to withstand extreme operating conditions, this TO-247 packaged transistor maintains performance across the full industrial temperature range (-55°C to 150°C). Its ±30V gate-source voltage rating provides enhanced protection against voltage spikes, while the through-hole mounting configuration ensures secure installation in high-vibration environments. The device's 5V gate threshold voltage at 100µA enables efficient drive circuit design with standard logic level controllers.

As part of STMicroelectronics' SuperMESH5™ family, the STW10N95K5 incorporates advanced trench gate technology that minimizes switching losses while maintaining excellent avalanche energy ratings. This makes it particularly well-suited for applications requiring high energy efficiency and robustness against voltage transients.

Applications and Performance

This versatile MOSFET excels in various power conversion systems including:

• Switch-mode power supplies (SMPS)
• Industrial motor drives
• Renewable energy inverters
• High-voltage DC-DC converters
• Plasma and industrial lighting systems

The device's combination of high voltage capability and reasonable on-resistance makes it an excellent choice for applications where space constraints and thermal management are critical design considerations. Its through-hole package ensures reliable mechanical stability in demanding environments.

When compared to similar devices in its class, the STW10N95K5 demonstrates superior performance metrics. Its 22nC gate charge rating enables faster switching transitions than many competing solutions, reducing switching losses in high-frequency applications. The 130W power dissipation rating at case temperature allows for higher current handling in thermally constrained designs.

Design Considerations and Best Practices

To maximize performance, designers should consider the following recommendations:

• Implement proper thermal management solutions for continuous operation above 4A
• Use gate drive circuits with sufficient current capability to fully charge the 22nC gate capacitance
• Ensure adequate creepage distance for 950V operation in PCB layout
• Implement snubber circuits to protect against voltage spikes in inductive load applications

When substituting this device in existing designs, engineers should verify compatibility with existing gate drive circuits and thermal management systems. The TO-247-3 package offers standard pinouts compatible with most existing MOSFET driver circuits.

Tags: Power MOSFET, High Voltage Transistor, TO-247 Package, Industrial Electronics, Energy Efficiency