STMicroelectronics STP80NF10 MOSFET N-Channel 100V 80A TO-220AB

High-Performance STP80NF10 MOSFET for Demanding Power Applications

STMicroelectronics' STP80NF10 N-Channel Power MOSFET represents the cutting-edge STripFET™ II technology, delivering exceptional performance for industrial and automotive power management systems. This advanced component combines robust electrical characteristics with reliable thermal stability, making it an ideal choice for engineers seeking efficient power solutions.

Technical Excellence in Power Semiconductor Design

The STP80NF10 features a 100V drain-source voltage rating and 80A continuous drain current capacity, enabling high-power switching applications in motor control, power supplies, and automotive systems. Its advanced MOSFET architecture achieves an impressive 15mOhm on-state resistance at 40A/10V gate-source voltage, minimizing conduction losses while maintaining superior switching performance.

Advanced Features for Enhanced Reliability

Engineered with ±20V gate-source voltage tolerance and 4V threshold voltage at 250µA, this device ensures stable operation across diverse environmental conditions. The integrated TO-220AB package provides excellent thermal management through its through-hole mounting configuration, while the 5500pF input capacitance at 25V enables efficient high-frequency switching.

As part of the STripFET™ II series, the STP80NF10 incorporates STMicroelectronics' proprietary manufacturing processes that optimize both static and dynamic parameters. This results in reduced switching losses, improved thermal performance, and enhanced avalanche energy ratings compared to conventional MOSFETs.

Industrial and Automotive Applications

This versatile power transistor excels in various applications including:

• Electric vehicle powertrains
• Industrial motor drives
• Switch-mode power supplies
• Renewable energy inverters
• Automotive electronic systems

The device's rugged construction and 300W maximum power dissipation capability make it particularly suitable for high-stress environments requiring continuous operation under heavy load conditions.

Design Considerations and Implementation

When integrating the STP80NF10 into new designs, engineers should consider its 10V drive voltage requirement for optimal RDS(on) performance. The device's high gate charge necessitates appropriate driver circuitry to maximize switching efficiency while maintaining thermal stability. Proper heatsinking is recommended for applications approaching the device's maximum current rating.

Available in tube packaging with RoHS-compliant construction, this component maintains full compatibility with standard PCB assembly processes. Its active product status and extensive characterization data make it a reliable choice for both prototyping and mass production scenarios.

Tags: Power MOSFET, STripFET II, TO-220 Package, STMicroelectronics, Industrial Transistor