STMicroelectronics STP20NM60FD N-Channel MOSFET 600V 20A TO220AB
- Brand: STMicroelectronics
- Product Code: STP20NM60FD
- Availability: In Stock
$1.30
- Ex Tax: $1.30
High-Performance Power Solution for Demanding Applications
In modern power electronics, selecting the right MOSFET is crucial for achieving optimal efficiency and reliability. The STP20NM60FD from STMicroelectronics stands as a prime example of advanced semiconductor technology, delivering robust performance for high-voltage applications. This N-Channel MOSFET combines 600V breakdown voltage with 20A continuous drain current capability, making it ideal for power supplies, motor controls, and industrial automation systems requiring dependable switching performance.
Technical Excellence in Power Management
Engineered with ST's proprietary FDmesh™ technology, this device achieves remarkable conduction efficiency while maintaining fast switching characteristics. The 290mΩ maximum RDS(on) at 10V gate drive significantly reduces conduction losses, translating to improved thermal performance and energy savings. With 37nC gate charge and 1300pF input capacitance, it enables efficient operation in high-frequency switching environments without compromising reliability.
| Parameter | Value |
|---|---|
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 20A |
| RDS(on) Max | 290mΩ @ 10A |
| Gate Charge | 37nC @ 10V |
| Operating Temperature | -65°C to 150°C |
Reliable Performance Across Industries
This TO-220 packaged device demonstrates exceptional thermal stability with 192W power dissipation at case temperature. Its ±30V gate voltage rating provides enhanced protection against transient voltages, while the 5V maximum threshold voltage ensures compatibility with standard logic drivers. The through-hole mounting configuration simplifies PCB integration while maintaining mechanical durability in demanding environments.
Engineers working on switch-mode power supplies (SMPS), LED lighting systems, or motor drive applications will appreciate its consistent performance across temperature ranges. The device's 150°C maximum operating junction temperature allows operation in harsh industrial settings while maintaining electrical integrity.
Design Advantages and Implementation
The STP20NM60FD's combination of high voltage capability and low on-resistance makes it particularly suitable for applications requiring compact power solutions. When designing with this MOSFET, engineers can leverage its excellent thermal characteristics to reduce heatsink requirements while maintaining reliable operation.
Its FDmesh™ technology implementation creates a unique balance between conduction and switching losses, making it an excellent choice for applications operating at frequencies up to several hundred kHz. The device's 250µA threshold voltage measurement condition ensures precise control characteristics across different operating conditions.
For designers seeking to maximize efficiency in their power circuits, this MOSFET offers a compelling combination of performance metrics. The through-hole package provides mechanical stability for applications subject to vibration or thermal cycling, while the TO-220 form factor remains a trusted standard in industrial electronics.
Tags: Power MOSFET, High Voltage, TO-220 Package, Electronic Components, Industrial Applications