STMicroelectronics STH315N10F7-2 100V 180A N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STH315N10F7-2
- Availability: In Stock
$2.30
- Ex Tax: $2.30
High-Performance STMicroelectronics STH315N10F7-2 N-Channel MOSFET for Demanding Applications
Engineered for excellence in automotive and industrial power systems, the STMicroelectronics STH315N10F7-2 N-Channel MOSFET represents the pinnacle of ST's DeepGATE™ and STripFET™ VII technologies. This advanced power transistor delivers exceptional efficiency, reliability, and thermal performance for modern high-power applications.
Technical Excellence in Power Electronics
With its robust 100V rating and 180A continuous drain current capability, this H2PAK-2 packaged MOSFET is optimized for high-current switching operations. The device's ultra-low Rds(on) of 2.3mΩ at 60A and 10V gate-source voltage minimizes conduction losses, making it ideal for power conversion systems requiring high efficiency. The ±20V gate-source voltage rating provides enhanced robustness in demanding environments.
| Parameter | Value |
|---|---|
| Max Voltage | 100V |
| Continuous Current | 180A |
| Rds(on) Max | 2.3mΩ |
| Gate Charge | 180nC |
Automotive-Grade Reliability
As an AEC-Q101 qualified component, this MOSFET meets stringent automotive quality standards. Its -55°C to 175°C operating temperature range ensures reliable performance in extreme conditions, while the surface-mount H2Pak-2 package facilitates efficient thermal management. The device's power dissipation rating of 315W (Tc) enables high-power applications without compromising longevity.
Key features include:
- DeepGATE™ technology for optimized switching performance
- STripFET™ VII trench structure for minimal on-resistance
- High-speed switching capabilities through 12800pF input capacitance
- Automotive compliance with AEC-Q101 standards
Design Flexibility and Applications
The STH315N10F7-2's versatile design makes it suitable for a wide range of applications including electric vehicle powertrains, industrial motor drives, and high-efficiency power supplies. Its TO-263AB package with surface-mount compatibility simplifies PCB integration while maintaining excellent thermal performance. The device's 4.5V gate threshold voltage ensures compatibility with standard logic drivers, enabling seamless integration in control circuits.
For engineers seeking to optimize power systems, this MOSFET offers:
- Reduced energy losses through advanced trench technology
- Enhanced thermal management via optimized package design
- Improved system reliability with automotive-grade construction
- Space-saving surface-mount implementation
Performance-Driven Innovation
STMicroelectronics' STripFET™ VII technology combines with DeepGATE™ innovations to deliver superior performance metrics. The device's 180nC gate charge rating enables fast switching transitions, reducing switching losses in high-frequency applications. With its 2.3mΩ on-resistance at 60A, this MOSFET maintains minimal power dissipation even under heavy load conditions.
As part of ST's automotive-qualified component portfolio, this transistor demonstrates the company's commitment to advancing power electronics for next-generation applications. Whether in electric vehicle systems or industrial automation equipment, the STH315N10F7-2 provides the reliability, efficiency, and performance demanded by modern power engineers.
Tags: Power Electronics, Automotive Components, High Voltage MOSFET, Surface Mount Transistor, Industrial Semiconductors