STMicroelectronics STH10N80K5-2AG N-Channel MOSFET
- Brand: STMicroelectronics
- Product Code: STH10N80K5-2AG
- Availability: In Stock
$2.00
- Ex Tax: $2.00
High-Performance Automotive MOSFET for Demanding Power Applications
STMicroelectronics continues to push the boundaries of power electronics with its STH10N80K5-2AG N-Channel MOSFET, a cutting-edge solution designed specifically for automotive applications requiring exceptional reliability and efficiency. This advanced component combines robust technical specifications with automotive-grade durability, making it an ideal choice for engineers working on next-generation vehicle systems.
Technical Excellence in Power Management
Operating at an impressive 800V drain-to-source voltage rating, this MOSFET delivers reliable performance in high-voltage environments while maintaining a remarkable 8A continuous drain current capacity. Its optimized design achieves a remarkably low Rds(on) of just 680mΩ at 4A and 10V gate-source voltage, significantly reducing conduction losses and improving overall system efficiency. The device's ±30V gate voltage rating provides enhanced operational flexibility while maintaining exceptional stability under varying conditions.
| Parameter | Value |
|---|---|
| Max Voltage | 800V |
| Continuous Current | 8A |
| Rds(on) Max | 680mΩ |
| Gate Charge | 17.3nC |
Automotive-Grade Reliability
Engineered to meet the rigorous demands of automotive electronics, this AEC-Q101 qualified component operates flawlessly across extreme temperature ranges from -55°C to 150°C. Its H2Pak-2 surface-mount package combines thermal efficiency with mechanical durability, making it particularly well-suited for under-hood applications where vibration resistance and thermal cycling performance are critical. The TO-263AB package format provides excellent heat dissipation characteristics while maintaining industry-standard footprint compatibility.
The device's 121W maximum power dissipation rating ensures reliable operation in high-stress environments, while the 426pF input capacitance at 100V Vds enables fast switching performance with minimal losses. With a gate charge of just 17.3nC at 10V, this MOSFET demonstrates exceptional switching efficiency that directly contributes to reduced power losses in high-frequency applications.
Advanced Design Features
Key design advantages include a 5V gate threshold voltage at 100µA, enabling precise control and compatibility with standard logic-level drive circuits. The device's 10V drive voltage optimization ensures optimal performance in typical automotive power systems while maintaining compatibility with existing driver ICs. The absence of special FET features indicates a focus on core performance metrics rather than unnecessary complexity.
For engineers working on electric vehicle powertrains, onboard chargers, or automotive DC-DC converters, this MOSFET offers a compelling combination of voltage capability, current capacity, and thermal performance. The component's tape-and-reel packaging format (Tape & Reel TR) facilitates automated assembly processes while maintaining component integrity during manufacturing.
Tags: Surface Mount, H2Pak-2, Power Electronics, High Voltage