STMicroelectronics STF24N60M2 MDmesh™ II Plus MOSFET

High-Performance STF24N60M2 MOSFET for Demanding Power Applications

In the rapidly evolving landscape of power electronics, STMicroelectronics continues to set industry benchmarks with its advanced MDmesh™ II Plus series. The STF24N60M2 N-Channel MOSFET represents a perfect blend of cutting-edge semiconductor technology and practical engineering, delivering exceptional performance characteristics for modern power systems. This through-hole device in a TO-220FP package combines high voltage capability with optimized conduction efficiency, making it an ideal choice for engineers seeking reliable power management solutions.

Technical Excellence in Power MOSFET Design

At the heart of this device lies ST's proprietary MDmesh technology, which significantly reduces on-state resistance while maintaining exceptional voltage handling capabilities. With a 600V drain-source voltage rating and 18A continuous drain current capacity, the STF24N60M2 excels in high-voltage switching applications. Its 190mΩ maximum Rds(on) at 9A and 10V gate drive ensures minimal power losses, translating to improved system efficiency and reduced thermal management requirements.

Key performance metrics include a gate charge of 29nC at 10V and input capacitance of 1060pF at 100V, enabling fast switching transitions while maintaining stability. The device's ±25V gate voltage rating provides enhanced design flexibility, while its 4V gate threshold voltage ensures reliable operation across varying temperature ranges (-55°C to 150°C). These characteristics make it particularly suitable for demanding environments where consistent performance is critical.

Engineered for Real-World Applications

The STF24N60M2's comprehensive feature set addresses a wide range of power conversion challenges. Its TO-220FP package offers excellent thermal dissipation capabilities, supporting the 30W maximum power dissipation rating. This combination of electrical and thermal performance makes it well-suited for applications including:

• Switch-mode power supplies (SMPS)
• Moter control systems
• Industrial automation equipment
• Renewable energy inverters
• High-voltage DC-DC converters

Engineers will appreciate the device's robust design, which maintains stable performance across varying operating conditions. The through-hole mounting format ensures reliable mechanical stability in demanding environments, while the active product status confirms its long-term availability for production designs.

Optimized for Modern Power Architectures

As power systems continue to evolve towards higher efficiency and compact form factors, the STF24N60M2 provides the ideal balance between performance and practicality. Its advanced silicon technology reduces conduction losses while maintaining excellent switching characteristics, enabling designers to create systems that meet modern energy efficiency standards.

The device's compatibility with standard 10V gate drive circuits simplifies implementation in existing designs, while its low input capacitance minimizes driver requirements. These features collectively contribute to reduced system complexity and lower overall component count, making it particularly valuable for cost-sensitive applications without compromising performance.

Quality and Reliability You Can Trust

As part of STMicroelectronics' MDmesh™ II Plus family, the STF24N60M2 benefits from rigorous quality assurance processes and extensive field testing. The device's construction utilizes advanced packaging techniques that ensure long-term reliability even under continuous operation at maximum ratings. This commitment to quality is evident in its consistent performance across the full operating temperature range and its exceptional resistance to thermal cycling.

Tags: Power Management, Semiconductor Device, Industrial Electronics, Electrical Components, Electronic Circuit