STMicroelectronics STF13NM60ND MOSFET N-Channel 600V 11A TO-220FP
- Brand: STMicroelectronics
- Product Code: STF13NM60ND
- Availability: In Stock
$0.46
- Ex Tax: $0.46
High-Performance STF13NM60ND MOSFET for Demanding Power Applications
STMicroelectronics continues to lead the semiconductor industry with its innovative power management solutions, and the STF13NM60ND MOSFET exemplifies this engineering excellence. This N-Channel power transistor combines advanced FDmesh™ II technology with robust design specifications to deliver exceptional performance in high-voltage applications. With its TO-220FP package and optimized electrical characteristics, this device represents the perfect balance between compact form factor and superior power handling capabilities.
Operating at 600V with an 11A continuous drain current rating, the STF13NM60ND is specifically designed for power conversion systems requiring reliable switching performance. Its 380mΩ maximum Rds(on) at 5.5A ensures minimal conduction losses, while the advanced gate charge characteristics enable fast switching transitions. The device's ±25V gate-source voltage tolerance provides enhanced operational flexibility, making it suitable for both industrial and consumer electronics applications.
Technical Specifications
Parameter | Value |
Drain-Source Voltage | 600V |
Continuous Drain Current | 11A |
Rds(on) Max | 380mΩ @ 10V Vgs |
Gate Charge | 24.5nC @ 10V |
Operating Temperature | 150°C TJ |
The STF13NM60ND's TO-220FP package offers excellent thermal management capabilities, with a power dissipation rating of 25W at case temperature. This through-hole device is particularly well-suited for applications where mechanical stability and reliable heat dissipation are critical. The device's 845pF input capacitance at 50V Vds ensures stable operation in high-frequency switching environments while maintaining gate control efficiency.
Engineers will appreciate the device's 5V gate threshold voltage at 250µA, which enables compatibility with standard logic-level drive circuits. The FDmesh™ II technology employed in this MOSFET reduces on-resistance while maintaining exceptional avalanche ruggedness, making it ideal for motor control, power supplies, and industrial automation equipment where reliability under stress conditions is paramount.
This N-Channel MOSFET's design prioritizes both performance and longevity. Its through-hole mounting configuration ensures mechanical durability in demanding environments, while the TO-220-3 Full Pack package maintains backward compatibility with existing system designs. The device's 25W power dissipation rating at case temperature allows for high-current operation without requiring excessive heatsinking in many applications.
From switch-mode power supplies to motor control systems, the STF13NM60ND demonstrates STMicroelectronics' commitment to advancing power semiconductor technology. Its combination of high voltage capability, low on-resistance, and rugged construction makes it a versatile choice for modern power electronics design. When integrated into power conversion systems, this device enables improved efficiency, reduced thermal stress, and enhanced overall system reliability.
Tags: Power MOSFETs, High Voltage Transistors, TO-220FP Package, Industrial Power Supplies, Motor Control Components