STMicroelectronics STD9N40M2 N-Channel MOSFET | 400V 6A DPAK Package

Benchmark Power Efficiency with STMicroelectronics' MDmesh™ II Plus Technology

In the evolving landscape of power electronics, STMicroelectronics continues to redefine performance boundaries with its STD9N40M2 N-Channel MOSFET – a cutting-edge device engineered for high-voltage applications requiring exceptional reliability and thermal management. This 400V, 6A power transistor represents the culmination of ST's MDmesh™ II Plus technology, combining advanced silicon design with robust DPAK packaging to deliver superior energy efficiency across industrial, automotive, and consumer electronics applications.

Technical Excellence in Power Discrete Design

The STD9N40M2 leverages ST's proprietary MDmesh™ II technology, featuring an optimized trench gate structure that minimizes conduction losses while maintaining exceptional switching performance. With a maximum R_DS(on) of just 800mΩ at 3A/10V gate drive, this device achieves remarkable thermal stability even under demanding operating conditions. The innovative design reduces gate charge to 8.8nC (at 10V), enabling faster switching transitions that significantly improve system efficiency in power conversion circuits.

Thermal Performance & Package Engineering

Housed in ST's thermally enhanced DPAK (TO-252) package, the STD9N40M2 achieves a remarkable 60W power dissipation rating at case temperature. This surface-mount device combines the mechanical robustness of SC-63 packaging with optimized lead frame design to ensure reliable heat dissipation in space-constrained environments. The ±25V gate voltage rating provides enhanced operational flexibility, while the 270pF input capacitance (at 100V V_DS) enables efficient high-frequency switching in modern power supplies and motor control applications.

The device's 4V gate threshold voltage (at 250µA) ensures compatibility with standard logic-level drivers while maintaining excellent noise immunity. This feature, combined with the device's inherent avalanche ruggedness, makes it particularly suitable for applications requiring high energy efficiency and fault tolerance.

Application Versatility

Engineers across multiple industries have found the STD9N40M2 to be an ideal solution for a wide range of power management applications. Its optimal balance of voltage rating, current capability, and thermal performance makes it particularly effective in:

• Switch-mode power supplies (SMPS) for industrial equipment
• Motor drives and actuator control systems
• Solar inverters and renewable energy systems
• High-voltage DC-DC converters
• Battery management systems for electric vehicles

The device's compliance with RoHS standards and halogen-free materials requirements further enhances its value proposition in environmentally conscious designs. With a 22,500-unit inventory availability and tape & reel packaging format, the STD9N40M2 offers excellent scalability for both prototyping and volume production scenarios.

Design Confidence & Reliability

STMicroelectronics' commitment to quality is evident in the STD9N40M2's comprehensive specification. The device maintains stable performance across the extended operating temperature range of -55°C to 150°C, ensuring reliable operation in harsh environments. Its advanced passivation layer and die attach technology provide exceptional resistance to thermal cycling, making it suitable for applications requiring long-term operational stability.

When integrating this MOSFET into your design, the recommended gate drive voltage of 10V ensures optimal R_DS(on) performance while maintaining safe operating margins. Designers should consider the device's 270pF input capacitance (at 100V) when calculating driver requirements and switching losses.

Tags: High Voltage MOSFET, Power Electronics, Industrial Transistors, Surface Mount Technology, Energy Efficient Components