STMicroelectronics STD7NM80 MOSFET N-Channel 800V 6.5A DPAK

STMicroelectronics STD7NM80 MOSFET N-Channel 800V 6.5A DPAK

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STMicroelectronics STD7NM80: High-Performance N-Channel MOSFET for Demanding Applications

The STMicroelectronics STD7NM80 is a cutting-edge N-Channel MOSFET engineered to deliver exceptional power efficiency and reliability in high-voltage environments. Designed for applications requiring robust performance, this device combines advanced MDmesh™ technology with optimized packaging to ensure superior thermal management and electrical characteristics. With a drain-to-source voltage rating of 800V and a continuous drain current of 6.5A, the STD7NM80 is ideal for power supplies, motor drives, and industrial automation systems where precision and durability are critical.

Key Specifications
ParameterValue
Vds (Max)800V
Id @ 25°C6.5A
Rds(on) @ 10V1.05Ω (Max)
Gate Charge18nC
Operating Temperature-55°C to 150°C

At the heart of the STD7NM80 lies STMicroelectronics' proprietary MDmesh™ technology, which minimizes conduction losses while maintaining exceptional switching performance. This innovation enables designers to achieve higher energy efficiency in applications such as solar inverters, uninterruptible power supplies (UPS), and high-voltage DC-DC converters. The device's ±30V gate voltage tolerance ensures robustness against transient voltage spikes, while its 90W power dissipation rating guarantees reliable operation even under demanding thermal conditions.

Design Advantages

Encased in a surface-mount DPAK (TO-252) package, the STD7NM80 offers several key benefits for modern electronics design:

  • Compact footprint for space-constrained PCB layouts
  • Enhanced thermal dissipation through the exposed tab
  • Compatibility with automated assembly processes

The 620pF input capacitance (Ciss) at 25V ensures minimal impact on gate driver requirements, while the 5V gate threshold voltage (Vgs(th)) enables efficient turn-on characteristics. These features collectively contribute to reduced system complexity and lower total cost of ownership across various industrial and consumer applications.

Application Versatility

The STD7NM80's combination of high voltage capability and moderate current handling makes it particularly well-suited for:

  • Smart home appliances with integrated motor control
  • Industrial power factor correction (PFC) circuits
  • High-voltage LED lighting systems
  • Electric vehicle charging infrastructure

Its automotive-qualified temperature range (-55°C to 150°C) ensures reliable operation in harsh environments, while the tape-and-reel packaging facilitates seamless integration into high-volume manufacturing processes.

Technical Excellence

Engineered with STMicroelectronics' decades of power semiconductor expertise, the STD7NM80 incorporates several advanced features:

  • Advanced cell design for uniform current distribution
  • Optimized body diode characteristics for improved recovery performance
  • Robust package construction with enhanced creepage distance

These technical advancements translate into real-world benefits including reduced electromagnetic interference (EMI), minimized switching losses, and extended system lifespan. When combined with the device's 18nC gate charge specification, designers can achieve faster switching transitions without compromising reliability.

Tags: N-Channel MOSFET, High Voltage MOSFET, DPAK Package, Power Management, Industrial Electronics

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