STMicroelectronics STD6N65M2 N-Channel MOSFET 650V 4A DPAK
- Brand: STMicroelectronics
- Product Code: STD6N65M2
- Availability: In Stock
$0.50
- Ex Tax: $0.50
STMicroelectronics STD6N65M2 N-Channel MOSFET: High-Performance Power Transistor for Demanding Applications
In modern electronics, power efficiency and reliability are critical for applications ranging from industrial machinery to renewable energy systems. The STMicroelectronics STD6N65M2 N-Channel MOSFET stands out as a cutting-edge solution designed to meet these demands. With its robust 650V rating, 4A current capacity, and compact DPAK package, this component redefines performance in high-voltage switching scenarios. Let’s explore how this device combines advanced semiconductor technology with practical design to deliver superior results.
Technical Excellence in a Compact Package
The STD6N65M2 belongs to STMicroelectronics’ MDmesh™ family, known for optimizing power density and efficiency. Its N-channel configuration supports rapid switching operations while maintaining low on-state resistance (1.35Ω @ 2A, 10V). This minimizes conduction losses, making it ideal for power supplies, motor controls, and LED lighting systems where thermal management is crucial.
Key technical specifications include:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 650V |
| Continuous Drain Current (ID) | 4A @ 25°C |
| RDS(on) (Max) | 1.35Ω @ 10V VGS |
| Gate Charge (Qg) | 9.8nC @ 10V |
| Operating Temperature | -55°C to 150°C |
Optimized for Real-World Performance
Engineers designing power conversion systems will appreciate the device’s ±25V gate voltage tolerance, which enhances durability in fluctuating environments. Its 226pF input capacitance at 100V VDS ensures fast switching transitions, reducing energy losses in high-frequency applications like DC-DC converters and solar inverters. The surface-mount DPAK package further simplifies integration into PCBs while supporting efficient heat dissipation through its exposed tab.
For thermal management, the device specifies a 60W power dissipation rating at case temperature, allowing operation in demanding industrial environments. The 4V gate threshold voltage ensures compatibility with standard logic-level drivers while preventing unintended turn-on in noisy circuits.
Applications Across Industries
This MOSFET’s versatility shines in diverse applications:
- Industrial Automation: Reliable switching for motor drives and PLC systems
- Renewable Energy: High-efficiency DC-AC conversion in solar inverters
- Consumer Electronics: Compact power supplies for appliances and smart home devices
- Automotive Systems: Robust performance in onboard chargers and 48V mild hybrid architectures
Why Choose the MDmesh™ STD6N65M2?
Compared to conventional power transistors, this device offers significant advantages:
- Reduced System Size: The DPAK package combines high power handling with space-saving surface-mount design
- Lower Operating Costs: Ultra-low conduction losses minimize heat generation, extending component lifespan
- Enhanced Reliability: Advanced trench-gate technology improves avalanche energy ratings
- Design Flexibility: Broad temperature range (-55°C to 150°C) supports operation in extreme environments
When building next-generation power systems, engineers trust STMicroelectronics’ MDmesh™ technology to deliver the performance margins needed for future-proof designs. The STD6N65M2 exemplifies this commitment, offering a perfect balance of electrical performance, thermal stability, and manufacturing efficiency.
Tags: Power MOSFET, High Voltage Transistor, Surface Mount Device, Industrial Power Electronics, Switching Applications