STMicroelectronics STD5N95K5 SuperMESH5™ N-Channel MOSFET (950V, 3.5A, DPAK)
- Brand: STMicroelectronics
- Product Code: STD5N95K5
- Availability: In Stock
$0.60
- Ex Tax: $0.60
High-Performance STD5N95K5 MOSFET for Demanding Power Applications
STMicroelectronics continues to push the boundaries of power semiconductor innovation with its SuperMESH5™ series, and the STD5N95K5 N-Channel MOSFET exemplifies this engineering excellence. Designed for high-voltage applications requiring exceptional efficiency and reliability, this 950V power transistor combines advanced silicon technology with robust packaging to deliver superior performance in industrial, automotive, and consumer electronics systems.
SuperMESH5™ Technology Advantages
At the heart of the STD5N95K5 lies ST's fifth-generation SuperMESH™ structure, which dramatically reduces on-resistance while maintaining excellent switching characteristics. This breakthrough technology enables the device to achieve an impressive 2.5Ω RDS(on) at 1.5A drain current, significantly minimizing conduction losses and improving overall system efficiency. The optimized charge balance design also contributes to exceptional avalanche energy ratings, making this MOSFET an ideal choice for applications requiring robustness in harsh operating environments.
Engineered for modern power conversion systems, this N-Channel transistor operates at a maximum voltage of 950V while maintaining continuous drain current capabilities of 3.5A. The device's ±30V gate-source voltage tolerance provides enhanced protection against transient voltage spikes, ensuring reliable operation in demanding switching applications.
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (Vdss) | 950 V |
| Continuous Drain Current | 3.5A @ 25°C |
| On-Resistance (Rds(on)) | 2.5Ω @ 10V Vgs |
| Gate Charge | 12.5 nC @ 10V |
| Operating Temperature | -55°C to 150°C |
Advanced Packaging Solutions
Housed in a DPAK (TO-252-3) surface-mount package, the STD5N95K5 offers excellent thermal performance through its low-profile design. The 3-lead plus tab configuration ensures efficient heat dissipation while maintaining compatibility with standard PCB assembly processes. This packaging solution enables designers to achieve high-density board layouts without compromising thermal management requirements.
The device's 70W power dissipation rating at case temperature demonstrates its capability to handle demanding power switching applications. With a maximum input capacitance of 220pF at 100V drain-source voltage, the MOSFET maintains fast switching performance while minimizing gate drive requirements.
Design Flexibility and System Integration
Engineers will appreciate the STD5N95K5's 5V gate threshold voltage (at 100µA), which allows for easy integration with standard logic-level controllers. The device's inherent avalanche ruggedness makes it suitable for applications involving inductive loads, such as motor drives and power supplies. Its tape-and-reel packaging format facilitates automated assembly processes, ensuring consistent manufacturing yields.
Key applications include:
• Switch-mode power supplies
• Motor control systems
• Industrial automation equipment
• Renewable energy inverters
• High-voltage DC-DC converters
As part of STMicroelectronics' comprehensive power semiconductor portfolio, the STD5N95K5 is manufactured under strict quality controls to meet automotive-grade reliability standards. The device's operating temperature range of -55°C to 150°C ensures stable performance in extreme environmental conditions.
Tags: Power MOSFET, SuperMESH5 Technology, High Voltage Transistor, Surface Mount Package, Industrial Power Electronics