STMicroelectronics STD5N20LT4 N-Channel MOSFET 200V 5A DPAK | High-Performance Power Transistor

STMicroelectronics STD5N20LT4 N-Channel MOSFET 200V 5A DPAK | High-Performance Power Transistor

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Revolutionizing Power Management with STMicroelectronics STD5N20LT4 N-Channel MOSFET

In the ever-evolving landscape of power electronics, the STMicroelectronics STD5N20LT4 N-Channel MOSFET emerges as a game-changer for engineers seeking optimal performance in compact designs. This high-efficiency transistor combines advanced STripFET™ technology with robust specifications, making it an ideal choice for modern power supply applications. Let's explore how this DPAK-packaged marvel is redefining expectations in power management solutions.

Technical Excellence in a Compact Form Factor

Engineered for demanding applications, the STD5N20LT4 delivers exceptional performance metrics that set new standards in its class. With a 200V drain-source voltage rating and 5A continuous drain current capability, this device maintains remarkable thermal efficiency through its surface-mount DPAK package. The integration of ST's proprietary STripFET™ technology ensures minimal conduction losses while maintaining exceptional switching performance.

Key electrical characteristics include:

ParameterSpecification
Max Drain-Source Voltage200 V
Continuous Drain Current5A @ 25°C
RDS(ON) Max @ 5V VGS700mΩ @ 2.5A
Gate Charge6 nC @ 5V
Operating Temperature-55°C to 150°C
Advanced Features for Demanding Applications

The STD5N20LT4 incorporates several innovative design elements that enhance its versatility and reliability:

Optimized Threshold Voltage: With a maximum VGS(th) of 2.5V @ 50µA, this MOSFET ensures stable operation across various temperature ranges while maintaining compatibility with standard gate drive circuits.

Enhanced Thermal Performance: The DPAK package's efficient thermal dissipation (33W max power dissipation) enables reliable operation even in high-temperature environments, reducing the need for additional cooling solutions.

High Capacitance Control: Featuring a maximum input capacitance of 242 pF @ 25V, the device maintains excellent switching characteristics while minimizing parasitic effects.

Robust Voltage Handling: The ±20V gate-source voltage rating provides enhanced protection against voltage spikes, ensuring long-term reliability in demanding applications.

Real-World Applications and Performance Benefits

This versatile N-channel MOSFET finds applications across multiple industries, including:

Power Supplies: Ideal for switch-mode power supplies (SMPS) and DC-DC converters requiring efficient power switching in compact designs.

Motor Control: Perfect for industrial motor drives and robotics applications where precise power control and thermal stability are critical.

Renewable Energy Systems: Suitable for solar inverters and energy storage systems demanding high-efficiency power conversion.

Automotive Electronics: Compliant with automotive temperature requirements (-55°C to 150°C), suitable for under-the-hood applications.

The STD5N20LT4's combination of high voltage capability and compact surface-mount packaging enables designers to create more space-efficient solutions without compromising performance. Its 700mΩ RDS(ON) at 5V drive voltage ensures minimal conduction losses, directly translating to improved system efficiency and reduced thermal management requirements.

Design Considerations and Implementation Tips

When integrating this power transistor into your design, consider the following best practices:

1. Gate Drive Optimization: While the device operates efficiently at 5V gate drive, ensure proper gate resistor selection to balance switching speed and electromagnetic interference (EMI).

2. Thermal Management: Although the DPAK package offers excellent thermal performance, proper PCB copper placement and heat sinking can further enhance power dissipation capabilities.

3. Parasitic Inductance Reduction: Minimize trace lengths in high-current paths to reduce voltage spikes during switching transitions.

4. Parallel Operation: When using multiple devices in parallel, ensure balanced current distribution through symmetrical layout techniques.

Compared to traditional through-hole MOSFETs, the STMicroelectronics STD5N20LT4 offers significant advantages in both performance and design flexibility. Its tape-and-reel packaging format simplifies automated assembly processes, reducing manufacturing costs while maintaining component consistency.

Future-Proofing Power Designs

As industries continue their push towards greater energy efficiency and miniaturization, the STD5N20LT4 positions itself as a forward-thinking solution. Its compliance with modern environmental standards and RoHS directives makes it suitable for eco-conscious designs. The device's robust construction and wide operating temperature range ensure long-term reliability in both industrial and automotive environments.

When compared to similar devices in its class, this MOSFET stands out through its optimal balance of voltage capability, conduction efficiency, and packaging convenience. The integration of STMicroelectronics' proven STripFET™ technology demonstrates a commitment to innovation that directly benefits end-users through enhanced system performance and reliability.

Whether you're designing cutting-edge power supplies, industrial control systems, or automotive electronics, the STMicroelectronics STD5N20LT4 N-Channel MOSFET offers a compelling combination of performance, reliability, and design flexibility that can elevate your projects to new heights. With its comprehensive datasheet documentation and industry-proven performance, this power transistor represents a smart investment for engineers seeking to create next-generation power solutions.

Tags: Power Transistors, MOSFETs, STMicroelectronics Components, N-Channel Devices, DPAK Package

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